If you made any changes in Pure these will be visible here soon.

Research Output 2008 2019

  • 1095 Citations
  • 17 h-Index
  • 76 Article
  • 17 Conference contribution
2019

Channel-based Phase and Power Controllable Intelligent Wireless Power Transfer Architecture Using 4 by 4 Planar Array Antennas

Lee, K., Kim, J., Seo, J., Yu, H-Y. & Cha, C., 2019 Jan 9, 2018 IEEE International Conference on Industrial Engineering and Engineering Management, IEEM 2018. IEEE Computer Society, p. 1353-1355 3 p. 8607659. (IEEE International Conference on Industrial Engineering and Engineering Management; vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Antenna arrays
Antennas
Wireless sensor networks
Air
Hafnium
Logic circuits
Metallizing
Nitrogen
Switches

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits

Shim, J., Jang, S. W., Lim, J. H., Kim, H., Kang, D. H., Kim, K. H., Seo, S., Heo, K., Shin, C., Yu, H-Y., Lee, S., Ko, D. H. & Park, J. H., 2019 Jul 21, In : Nanoscale. 11, 27, p. 12871-12877 7 p.

Research output: Contribution to journalArticle

Logic circuits
Transition metals
Transistors
Tungsten
Leakage currents

Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior

Han, K. H., Kim, G. S., Park, J., Kim, S. G., Park, J. H. & Yu, H-Y., 2019 Jun 12, In : ACS Applied Materials and Interfaces. 11, 23, p. 20949-20955 7 p.

Research output: Contribution to journalArticle

Threshold voltage
Passivation
Hysteresis
Transistors
Field effect transistors

Rhenium Diselenide (ReSe2) Near-Infrared Photodetector: Performance Enhancement by Selective p-Doping Technique

Kim, J., Heo, K., Kang, D. H., Shin, C., Lee, S., Yu, H-Y. & Park, J. H., 2019 Jan 1, (Accepted/In press) In : Advanced Science. 1901255.

Research output: Contribution to journalArticle

Open Access
Rhenium
Hydrochloric Acid
rhenium
Photodetectors
hydrochloric acid
1 Citation (Scopus)

Schottky barrier height modulation of metal-interlayer-semiconductor structure depending on contact surface orientation for multi-gate transistors

Kim, G. S., Lee, T. I., Cho, B. J. & Yu, H-Y., 2019 Jan 7, In : Applied Physics Letters. 114, 1, 012102.

Research output: Contribution to journalArticle

interlayers
transistors
electric contacts
modulation
metals
4 Citations (Scopus)

Schottky Barrier Height Modulation Using Interface Characteristics of MoS 2 Interlayer for Contact Structure

Kim, S. H., Han, K. H., Kim, G. S., Kim, S. G., Kim, J. & Yu, H-Y., 2019 Feb 13, In : ACS Applied Materials and Interfaces. 11, 6, p. 6230-6237 8 p.

Research output: Contribution to journalArticle

Metals
Modulation
Semiconductor materials
Fermi level
Nanoelectronics

Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using y Doped ZrO 2 with record-low leakage current

Lee, T. I., Ahn, H. J., Kim, M. J., Shin, E. J., Lee, S. H., Shin, S. W., Hwang, W. S., Yu, H-Y. & Cho, B. J., 2019 Apr 1, In : IEEE Electron Device Letters. 40, 4, p. 502-505 4 p., 8641385.

Research output: Contribution to journalArticle

Leakage currents
Transistors
Electric properties
Electric power utilization
Permittivity
2018

Analytical study of polymer deposition distribution for two-dimensional trench sidewall in low-k fluorocarbon plasma etching process

Kim, S. W., Zang, H. J., Park, J., Kim, G. S., Yu, H-Y., Ha, M., Ko, K., Park, S. S. & Kim, C. H., 2018 Jan 1, In : Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 36, 1, 011802.

Research output: Contribution to journalArticle

Fluorocarbons
Plasma etching
fluorocarbons
plasma etching
Polymers
4 Citations (Scopus)

Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation

Kim, S. H., Kim, G. S., Kim, S. W. & Yu, H-Y., 2018 Sep 30, In : Applied Surface Science. 453, p. 48-55 8 p.

Research output: Contribution to journalArticle

Metals
Semiconductor materials
Ohmic contacts
Interface states
Contact resistance
1 Citation (Scopus)

Effects of metal-interlayer-semiconductor source/drain contact structure on n-type germanium junctionless FinFETs

Jung, S. G., Kim, S. H., Kim, G. S. & Yu, H-Y., 2018 Aug 1, In : IEEE Transactions on Electron Devices. 65, 8, p. 3136-3141 6 p., 8401844.

Research output: Contribution to journalArticle

Germanium
Metals
Semiconductor materials
Fermi level
Computer aided design
3 Citations (Scopus)

Fabrication of Multi-layered Macroscopic Hydrogel Scaffold Composed of Multiple Components by Precise Control of UV Energy

Roh, D., Choi, W., Kim, J., Yu, H-Y., Choi, N. & Cho, I. J., 2018 Dec 1, In : Biochip Journal. 12, 4, p. 280-286 7 p.

Research output: Contribution to journalArticle

Hydrogel
Hydrogels
Scaffolds
Fabrication
Artificial Organs
1 Citation (Scopus)

Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain

Kim, S. G., Kim, G. S., Kim, S. H. & Yu, H-Y., 2018 Dec 1, In : IEEE Electron Device Letters. 39, 12, p. 1828-1831 4 p., 8490847.

Research output: Contribution to journalArticle

Germanium
Silicon
Rapid thermal annealing
Chemical activation
Doping (additives)
2 Citations (Scopus)

Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance Achievement

Kim, S. H., Kim, G. S., Park, J., Lee, C., Kim, H., Kim, J., Shim, J. H. & Yu, H-Y., 2018 Aug 8, In : ACS Applied Materials and Interfaces. 10, 31, p. 26378-26386 9 p.

Research output: Contribution to journalArticle

Contact resistance
Metals
Semiconductor materials
Ohmic contacts
Tuning
18 Citations (Scopus)

Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States

Kim, G. S., Kim, S. H., Park, J., Han, K. H., Kim, J. & Yu, H-Y., 2018 Jun 26, In : ACS Nano. 12, 6, p. 6292-6300 9 p.

Research output: Contribution to journalArticle

Fermi level
electric contacts
Transistors
transistors
Metals

Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device

Shin, J., Ko, E., Park, J., Kim, S. G., Lee, J. W., Yu, H-Y. & Shin, C., 2018 Sep 3, In : Applied Physics Letters. 113, 10, 102104.

Research output: Contribution to journalArticle

fins
field effect transistors
thresholds
threshold voltage
slopes
2 Citations (Scopus)

Universal metal-interlayer-semiconductor contact modeling considering interface-state effect on contact resistivity degradation

Kim, J. K., Kim, S. H., Kim, T. & Yu, H-Y., 2018 Nov 1, In : IEEE Transactions on Electron Devices. 65, 11, p. 4982-4987 6 p., 8466861.

Research output: Contribution to journalArticle

Interface states
Metals
Semiconductor materials
Degradation
Fermi level
2017

An electrical analysis of a metal-interlayer-semiconductor structure on high-quality Si1-xGex films for non-alloyed ohmic contact

Kim, S. G., Kim, G. S., Kim, S. H., Kim, S. W., Park, J. & Yu, H-Y., 2017 Oct 1, In : Journal of Nanoscience and Nanotechnology. 17, 10, p. 7323-7326 4 p.

Research output: Contribution to journalArticle

Semiconductors
Ohmic contacts
electric contacts
interlayers
Metals

Bonding based channel transfer and low temperature process for monolithic 3D integration platform development

Choi, R., Yu, H-Y., Kim, H., Ryu, H. Y., Bae, H. K., Choi, K. K., Cha, Y. W. & Choi, C., 2017 Jan 3, 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016. Institute of Electrical and Electronics Engineers Inc., 7804407

Research output: Chapter in Book/Report/Conference proceedingConference contribution

platforms
wafers
helium ions
hydrogen ions
Ion implantation
2 Citations (Scopus)

Efficient Threshold Voltage Adjustment Technique by Dielectric Capping Effect on MoS2 Field-Effect Transistor

Park, J., Kang, D. H., Kim, J-K., Park, J. H. & Yu, H-Y., 2017 Aug 1, In : IEEE Electron Device Letters. 38, 8, p. 1172-1175 4 p., 7961276.

Research output: Contribution to journalArticle

Field effect transistors
Threshold voltage
Controllability
Transition metals
Defects
1 Citation (Scopus)

Fermi Level Depinning in Ti/GeO₂/n-Ge via the Interfacial Reaction Between Ti and GeO₂

Seo, Y., Lee, T. I., Ahn, H. J., Moon, J., Hwang, W. S., Yu, H-Y. & Cho, B. J., 2017 Aug 12, (Accepted/In press) In : IEEE Transactions on Electron Devices.

Research output: Contribution to journalArticle

Surface chemistry
Fermi level
Substrates
Ohmic contacts
Oxides
6 Citations (Scopus)

Fermi-Level Unpinning Technique with Excellent Thermal Stability for n-Type Germanium

Kim, G. S., Kim, S. H., Lee, T. I., Cho, B. J., Choi, C., Shin, C., Shim, J. H., Kim, J. & Yu, H-Y., 2017 Oct 18, In : ACS Applied Materials and Interfaces. 9, 41, p. 35988-35997 10 p.

Research output: Contribution to journalArticle

Germanium
Fermi level
Thermodynamic stability
Metals
Semiconductor materials
7 Citations (Scopus)

Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Ahn, H. J., Moon, J., Seo, Y., Lee, T. I., Kim, C. K., Hwang, W. S., Yu, H-Y. & Cho, B. J., 2017 Apr 25, (Accepted/In press) In : IEEE Transactions on Electron Devices.

Research output: Contribution to journalArticle

Nickel
Thin films
Atomic layer deposition
Annealing
Plasmas
1 Citation (Scopus)

Impact of metal nitrides on contact resistivity of metal-interlayer-semiconductor source/drain in sub-14 nm n-type Si FinFET

Ahn, J., Kim, J. K., Kim, J-K., Kim, J., Park, J. H. & Yu, H-Y., 2017, In : Journal of Nanoscience and Nanotechnology. 17, 5, p. 3084-3088 5 p.

Research output: Contribution to journalArticle

metal nitrides
Semiconductors
Nitrides
Tantalum
electric contacts
1 Citation (Scopus)

Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

Seo, Y., Kim, C. K., Lee, T. I., Hwang, W. S., Yu, H-Y., Choi, Y. K. & Cho, B. J., 2017 Oct 1, In : IEEE Transactions on Electron Devices. 64, 10, p. 3998-4001 4 p., 8019845.

Research output: Contribution to journalArticle

Aluminum
Germanium oxides
Charge trapping
Desorption
aluminum oxynitride
1 Citation (Scopus)

Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface

Lee, T. I., Seo, Y., Moon, J., Ahn, H. J., Yu, H-Y., Hwang, W. S. & Cho, B. J., 2017 Apr 1, In : Solid-State Electronics. 130, p. 57-62 6 p.

Research output: Contribution to journalArticle

Oxygen vacancies
oxygen
MOS devices
Interface states
Substrates

Performance evaluation of 7nm n-type germanium junctionless field-effect-transistor with metal-interlayer-semiconductor source/drain structure

Jung, S. G. & Yu, H-Y., 2017 Dec 1, EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-January. p. 1-2 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Germanium
Field effect transistors
Metals
Semiconductor materials
Fermi level
7 Citations (Scopus)

The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks

Seo, Y., Lee, T. I., Yoon, C. M., Park, B. E., Hwang, W. S., Kim, H., Yu, H-Y. & Cho, B. J., 2017 Aug 1, In : IEEE Transactions on Electron Devices. 64, 8, p. 3303-3307 5 p., 7970127.

Research output: Contribution to journalArticle

Passivation
Annealing
Scalability
Desorption
Thermodynamic stability
2016

2-Dimensional analysis of plasma ashing damage induced by oxygen-based plasmas along nanopores in SiOCH film for a nanoscale back-end of line process

Kim, G. S., Kim, S. W., Zang, H. J., Ha, M., Park, S. S., Kim, C. H. & Yu, H-Y., 2016, In : Journal of Nanoscience and Nanotechnology. 16, 11, p. 11766-11770 5 p.

Research output: Contribution to journalArticle

Nanopores
dimensional analysis
Oxygen
damage
Plasmas
52 Citations (Scopus)

A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

Jo, S. H., Kang, D. H., Shim, J., Jeon, J., Jeon, M. H., Yoo, G., Kim, J., Lee, J., Yeom, G. Y., Lee, S., Yu, H-Y., Choi, C. & Park, J. H., 2016 Jun 22, In : Advanced Materials. p. 4824-4831 8 p.

Research output: Contribution to journalArticle

Economic and social effects
Field effect transistors
Photodetectors
Optoelectronic devices
Transition metals
1 Citation (Scopus)

A new MEMS neural probe system integrated with push-pull microfluidic channels and biosensors for real-time monitoring of neurochemicals

Chae, U., Shin, H., Lee, H. J., Lee, J., Choi, N., Lee, Y. J., Lee, S. H., Woo, J., Cho, Y., Yoon, E. S., Yu, H-Y. & Cho, I. J., 2016 Feb 26, MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-February. p. 329-332 4 p. 7421627

Research output: Chapter in Book/Report/Conference proceedingConference contribution

bioinstrumentation
Microfluidics
Biosensors
microelectromechanical systems
MEMS
2 Citations (Scopus)

Ar plasma treatment for III-V semiconductor-based transistor source/drain contact resistance reduction

Kim, S. H., Kim, S. W., Kim, G. S., Kim, J., Park, J. H. & Yu, H-Y., 2016 Oct 1, In : Journal of Nanoscience and Nanotechnology. 16, 10, p. 10389-10392 4 p.

Research output: Contribution to journalArticle

Semiconductors
Contact resistance
contact resistance
Oxides
Transistors
7 Citations (Scopus)

Asymmetrically contacted germanium photodiode using a metal-interlayer-semiconductor-metal structure for extremely large dark current suppression

Zang, H. J., Kim, G. S., Park, G. J., Choi, Y. S. & Yu, H-Y., 2016 Aug 15, In : Optics Letters. 41, 16, p. 3686-3689 4 p.

Research output: Contribution to journalArticle

Germanium
Semiconductors
dark current
photodiodes
interlayers
3 Citations (Scopus)

Contact resistance reduction using dielectric materials of nanoscale thickness on silicon for monolithic 3D integration

Kim, S. H., Kim, G. S., Oh, S., Park, J. H. & Yu, H-Y., 2016 Dec 1, In : Journal of Nanoscience and Nanotechnology. 16, 12, p. 12764-12767 4 p.

Research output: Contribution to journalArticle

Silicon
Contact resistance
contact resistance
Semiconductors
Metals
18 Citations (Scopus)

Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack

Kim, G. S., Kim, S. W., Kim, S. H., Park, J., Seo, Y., Cho, B. J., Shin, C., Shim, J. H. & Yu, H-Y., 2016 Dec 28, In : ACS Applied Materials and Interfaces. 8, 51, p. 35419-35425 7 p.

Research output: Contribution to journalArticle

Germanium
Fermi level
Metals
Electrons
Semiconductor materials
9 Citations (Scopus)

Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure

Kim, G. S., Yoo, G., Seo, Y., Kim, S. H., Cho, K., Cho, B. J., Shin, C., Park, J. H. & Yu, H-Y., 2016 Jun 1, In : IEEE Electron Device Letters. 37, 6, p. 709-712 4 p., 7460191.

Research output: Contribution to journalArticle

Germanium
Contact resistance
Hydrogen
Metals
Annealing
1 Citation (Scopus)

Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

Ahn, J., Kim, J. K., Kim, S. W., Kim, G. S., Shin, C., Kim, J-K., Cho, B. J. & Yu, H-Y., 2016 Jun 1, In : IEEE Electron Device Letters. 37, 6, p. 705-708 4 p., 7451242.

Research output: Contribution to journalArticle

Nitrides
Tantalum
Metals
Computer aided design
Semiconductor materials
1 Citation (Scopus)

Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device

Choi, H., Lee, H., Park, J., Yu, H-Y., Kim, T. G. & Shin, C., 2016 Nov 14, In : Applied Physics Letters. 109, 20, 203505.

Research output: Contribution to journalArticle

capacitance
insulators
capacitors
MIS (semiconductors)
depletion
30 Citations (Scopus)

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

Park, H. Y., Jung, W. S., Kang, D. H., Jeon, J., Yoo, G., Park, Y., Lee, J., Jang, Y. H., Lee, J., Park, S., Yu, H-Y., Shin, B., Lee, S. & Park, J. H., 2016, In : Advanced Materials. 28, 5, p. 864-870 7 p.

Research output: Contribution to journalArticle

Graphite
Contact resistance
Graphene
Doping (additives)
Metals

Formation of low-resistivity metal/germanium contact with ultra-thin interlayer and plasma oxidation for n-channel germanium FET

Kim, G. S., Kim, S. H., Park, J., Kim, S. W. & Yu, H-Y., 2016, Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. 4 ed. Electrochemical Society Inc., Vol. 72. p. 127-129 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Germanium
Plasmas
Oxidation
Contact resistance
10 Citations (Scopus)

Non-alloyed ohmic contacts on GaAs using metal-interlayer-semiconductor structure with SF6 plasma treatment

Kim, S. H., Kim, G. S., Kim, S. W., Kim, J. K., Choi, C., Park, J. H., Choi, R. & Yu, H-Y., 2016 Apr 1, In : IEEE Electron Device Letters. 37, 4, p. 373-376 4 p., 2524470.

Research output: Contribution to journalArticle

Ohmic contacts
Metals
Semiconductor materials
Plasmas
Contact resistance
1 Citation (Scopus)

Performance analysis and design of FET-embedded capacitive micromachined ultrasonic transducer (CMUT)

Jung, S. G., Kim, J., Hwang, K. S., Yu, H-Y. & Lee, B. C., 2016 Nov 1, 2016 IEEE International Ultrasonics Symposium, IUS 2016. IEEE Computer Society, Vol. 2016-November. 7728607

Research output: Chapter in Book/Report/Conference proceedingConference contribution

transducers
field effect transistors
ultrasonics
electric potential
simulation
10 Citations (Scopus)

Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET with Metal-Interlayer-Semiconductor Source/Drain

Shin, C., Kim, J. K., Kim, G. S., Lee, H., Shin, C., Kim, J-K., Cho, B. J. & Yu, H-Y., 2016 Nov 1, In : IEEE Transactions on Electron Devices. 63, 11, p. 4167-4172 6 p., 7571111.

Research output: Contribution to journalArticle

Germanium
Threshold voltage
Metals
Doping (additives)
Semiconductor materials

Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure

Kim, S. H., Kim, G. S., Kim, S. W. & Yu, H-Y., 2016, Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. 4 ed. Electrochemical Society Inc., Vol. 72. p. 321-323 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Contact resistance
Ohmic contacts
Metals
Semiconductor materials
Fermi level
13 Citations (Scopus)

The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction

Kim, S. W., Kim, S. H., Kim, G. S., Choi, C., Choi, R. & Yu, H-Y., 2016 Dec 28, In : ACS Applied Materials and Interfaces. 8, 51, p. 35614-35620 7 p.

Research output: Contribution to journalArticle

Metals
Semiconductor materials
Contact resistance
Ohmic contacts
Optical devices

The effect of post-fabrication annealing on an amorphous IGZO visible-light photodetector

Park, Y., Park, H. Y., Kang, D. H., Kim, G. S., Lim, D., Yu, H-Y., Choi, C. & Park, J. H., 2016, In : Journal of Nanoscience and Nanotechnology. 16, 11, p. 11745-11749 5 p.

Research output: Contribution to journalArticle

Photodetectors
photometers
Photosensitivity
Annealing
photosensitivity
1 Citation (Scopus)

Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions

Shim, J., Yoo, G., Kang, D. H., Jung, W. S., Byun, Y. C., Kim, H., Kang, W. T., Yu, W. J., Yu, H-Y., Park, Y. & Park, J. H., 2016 Jan 1, In : IEEE Electron Device Letters. 37, 1, p. 4-7 4 p., 7317745.

Research output: Contribution to journalArticle

Graphite
Graphene
Semiconductor junctions
Modulation
1 Citation (Scopus)

Threshold voltage variation-immune FinFET design with metal-interlayer-semiconductor source/drain structure

Shin, C., Kim, J. K., Shin, C., Kim, J-K. & Yu, H-Y., 2016 Jun 1, In : Current Applied Physics. 16, 6, p. 618-622 5 p.

Research output: Contribution to journalArticle

Threshold voltage
threshold voltage
interlayers
fins
Metals
2015
4 Citations (Scopus)

Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene

Park, H. Y., Yoon, J. S., Jeon, J., Kim, J., Jo, S. H., Yu, H-Y., Lee, S. & Park, J. H., 2015 Jul 1, In : Organic Electronics: physics, materials, applications. 22, p. 117-121 5 p.

Research output: Contribution to journalArticle

Graphite
Graphene
graphene
phosphorus pentoxide
Doping (additives)
10 Citations (Scopus)

Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors

Kim, S. H., Kim, G. S., Kim, J. K., Park, J. H., Shin, C., Choi, C. & Yu, H-Y., 2015 Sep 1, In : IEEE Electron Device Letters. 36, 9, p. 884-886 3 p., 7151781.

Research output: Contribution to journalArticle

Ohmic contacts
High electron mobility transistors
Fermi level
Passivation
Metals