• 1233 Citations
  • 18 h-Index
20082020

Research output per year

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Research Output

  • 1233 Citations
  • 18 h-Index
  • 84 Article
  • 17 Conference contribution
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Article
2020

A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory

Kim, K. H., Park, H. Y., Shim, J., Shin, G., Andreev, M., Koo, J., Yoo, G., Jung, K., Heo, K., Lee, Y., Yu, H. Y., Kim, K. R., Cho, J. H., Lee, S. & Park, J. H., 2020 Apr, In : Nanoscale Horizons. 5, 4, p. 654-662 9 p.

Research output: Contribution to journalArticle

Analysis of Drain Linear Current Turn-Around Effect in Off-State Stress Mode in pMOSFET

Jung, S. G., Lee, S. H., Kim, C. K., Yoo, M. S. & Yu, H. Y., 2020 Jun 1, In : IEEE Electron Device Letters. 41, 6, p. 804-807 4 p., 9075291.

Research output: Contribution to journalArticle

2019

Anomalous Te Inclusion Size and Distribution in CdZnTeSe

Hwang, S., Yu, H., Bolotnikov, A. E., James, R. B. & Kim, K., 2019 Nov, In : IEEE Transactions on Nuclear Science. 66, 11, p. 2329-2332 4 p., 8854136.

Research output: Contribution to journalArticle

Open Access

Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering

Kim, T., Kim, J. K., Yoo, B., Xu, H., Yim, S., Kim, S. H., Yu, H. Y. & Jeong, J. K., 2019 Jan 1, In : Journal of Materials Chemistry C. 8, 1, p. 201-208 8 p.

Research output: Contribution to journalArticle

Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

Kim, S. G., Kim, S. H., Park, J., Kim, G. S., Park, J. H., Saraswat, K. C., Kim, J. & Yu, H. Y., 2019 Jan 1, In : ACS Nano. 13, 9, p. 10294-10300 7 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits

Shim, J., Jang, S. W., Lim, J. H., Kim, H., Kang, D. H., Kim, K. H., Seo, S., Heo, K., Shin, C., Yu, H-Y., Lee, S., Ko, D. H. & Park, J. H., 2019 Jul 21, In : Nanoscale. 11, 27, p. 12871-12877 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior

Han, K. H., Kim, G. S., Park, J., Kim, S. G., Park, J. H. & Yu, H-Y., 2019 Jun 12, In : ACS Applied Materials and Interfaces. 11, 23, p. 20949-20955 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Rhenium Diselenide (ReSe2) Near-Infrared Photodetector: Performance Enhancement by Selective p-Doping Technique

Kim, J., Heo, K., Kang, D. H., Shin, C., Lee, S., Yu, H-Y. & Park, J. H., 2019 Jan 1, (Accepted/In press) In : Advanced Science. 1901255.

Research output: Contribution to journalArticle

Open Access

Schottky barrier height modulation of metal-interlayer-semiconductor structure depending on contact surface orientation for multi-gate transistors

Kim, G. S., Lee, T. I., Cho, B. J. & Yu, H-Y., 2019 Jan 7, In : Applied Physics Letters. 114, 1, 012102.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Schottky Barrier Height Modulation Using Interface Characteristics of MoS 2 Interlayer for Contact Structure

Kim, S. H., Han, K. H., Kim, G. S., Kim, S. G., Kim, J. & Yu, H-Y., 2019 Feb 13, In : ACS Applied Materials and Interfaces. 11, 6, p. 6230-6237 8 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)

Ultralow schottky barrier height achieved by using molybdenum disulfide/dielectric stack for source/drain contact

Kim, S. H., Han, K. H., Park, E., Kim, S. G. & Yu, H. Y., 2019 Sep 18, In : ACS Applied Materials and Interfaces. 11, 37, p. 34084-34090 7 p.

Research output: Contribution to journalArticle

Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using y Doped ZrO 2 with record-low leakage current

Lee, T. I., Ahn, H. J., Kim, M. J., Shin, E. J., Lee, S. H., Shin, S. W., Hwang, W. S., Yu, H-Y. & Cho, B. J., 2019 Apr 1, In : IEEE Electron Device Letters. 40, 4, p. 502-505 4 p., 8641385.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2018

Analytical study of polymer deposition distribution for two-dimensional trench sidewall in low-k fluorocarbon plasma etching process

Kim, S. W., Zang, H. J., Park, J., Kim, G. S., Yu, H-Y., Ha, M., Ko, K., Park, S. S. & Kim, C. H., 2018 Jan 1, In : Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 36, 1, 011802.

Research output: Contribution to journalArticle

Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation

Kim, S. H., Kim, G. S., Kim, S. W. & Yu, H-Y., 2018 Sep 30, In : Applied Surface Science. 453, p. 48-55 8 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Effects of metal-interlayer-semiconductor source/drain contact structure on n-type germanium junctionless FinFETs

Jung, S. G., Kim, S. H., Kim, G. S. & Yu, H-Y., 2018 Aug 1, In : IEEE Transactions on Electron Devices. 65, 8, p. 3136-3141 6 p., 8401844.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Fabrication of Multi-layered Macroscopic Hydrogel Scaffold Composed of Multiple Components by Precise Control of UV Energy

Roh, D., Choi, W., Kim, J., Yu, H-Y., Choi, N. & Cho, I. J., 2018 Dec 1, In : Biochip Journal. 12, 4, p. 280-286 7 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain

Kim, S. G., Kim, G. S., Kim, S. H. & Yu, H-Y., 2018 Dec 1, In : IEEE Electron Device Letters. 39, 12, p. 1828-1831 4 p., 8490847.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance Achievement

Kim, S. H., Kim, G. S., Park, J., Lee, C., Kim, H., Kim, J., Shim, J. H. & Yu, H-Y., 2018 Aug 8, In : ACS Applied Materials and Interfaces. 10, 31, p. 26378-26386 9 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States

Kim, G. S., Kim, S. H., Park, J., Han, K. H., Kim, J. & Yu, H-Y., 2018 Jun 26, In : ACS Nano. 12, 6, p. 6292-6300 9 p.

Research output: Contribution to journalArticle

29 Citations (Scopus)

Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device

Shin, J., Ko, E., Park, J., Kim, S. G., Lee, J. W., Yu, H-Y. & Shin, C., 2018 Sep 3, In : Applied Physics Letters. 113, 10, 102104.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Universal metal-interlayer-semiconductor contact modeling considering interface-state effect on contact resistivity degradation

Kim, J. K., Kim, S. H., Kim, T. & Yu, H-Y., 2018 Nov 1, In : IEEE Transactions on Electron Devices. 65, 11, p. 4982-4987 6 p., 8466861.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2017

An electrical analysis of a metal-interlayer-semiconductor structure on high-quality Si1-xGex films for non-alloyed ohmic contact

Kim, S. G., Kim, G. S., Kim, S. H., Kim, S. W., Park, J. & Yu, H-Y., 2017 Oct 1, In : Journal of Nanoscience and Nanotechnology. 17, 10, p. 7323-7326 4 p.

Research output: Contribution to journalArticle

Efficient Threshold Voltage Adjustment Technique by Dielectric Capping Effect on MoS2 Field-Effect Transistor

Park, J., Kang, D. H., Kim, J-K., Park, J. H. & Yu, H-Y., 2017 Aug 1, In : IEEE Electron Device Letters. 38, 8, p. 1172-1175 4 p., 7961276.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Fermi Level Depinning in Ti/GeO₂/n-Ge via the Interfacial Reaction Between Ti and GeO₂

Seo, Y., Lee, T. I., Ahn, H. J., Moon, J., Hwang, W. S., Yu, H-Y. & Cho, B. J., 2017 Aug 12, (Accepted/In press) In : IEEE Transactions on Electron Devices.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Fermi-Level Unpinning Technique with Excellent Thermal Stability for n-Type Germanium

Kim, G. S., Kim, S. H., Lee, T. I., Cho, B. J., Choi, C., Shin, C., Shim, J. H., Kim, J. & Yu, H-Y., 2017 Oct 18, In : ACS Applied Materials and Interfaces. 9, 41, p. 35988-35997 10 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Ahn, H. J., Moon, J., Seo, Y., Lee, T. I., Kim, C. K., Hwang, W. S., Yu, H-Y. & Cho, B. J., 2017 Apr 25, (Accepted/In press) In : IEEE Transactions on Electron Devices.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Impact of metal nitrides on contact resistivity of metal-interlayer-semiconductor source/drain in sub-14 nm n-type Si FinFET

Ahn, J., Kim, J. K., Kim, J-K., Kim, J., Park, J. H. & Yu, H-Y., 2017, In : Journal of Nanoscience and Nanotechnology. 17, 5, p. 3084-3088 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

Seo, Y., Kim, C. K., Lee, T. I., Hwang, W. S., Yu, H-Y., Choi, Y. K. & Cho, B. J., 2017 Oct 1, In : IEEE Transactions on Electron Devices. 64, 10, p. 3998-4001 4 p., 8019845.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface

Lee, T. I., Seo, Y., Moon, J., Ahn, H. J., Yu, H-Y., Hwang, W. S. & Cho, B. J., 2017 Apr 1, In : Solid-State Electronics. 130, p. 57-62 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks

Seo, Y., Lee, T. I., Yoon, C. M., Park, B. E., Hwang, W. S., Kim, H., Yu, H-Y. & Cho, B. J., 2017 Aug 1, In : IEEE Transactions on Electron Devices. 64, 8, p. 3303-3307 5 p., 7970127.

Research output: Contribution to journalArticle

8 Citations (Scopus)
2016

2-Dimensional analysis of plasma ashing damage induced by oxygen-based plasmas along nanopores in SiOCH film for a nanoscale back-end of line process

Kim, G. S., Kim, S. W., Zang, H. J., Ha, M., Park, S. S., Kim, C. H. & Yu, H-Y., 2016, In : Journal of Nanoscience and Nanotechnology. 16, 11, p. 11766-11770 5 p.

Research output: Contribution to journalArticle

A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

Jo, S. H., Kang, D. H., Shim, J., Jeon, J., Jeon, M. H., Yoo, G., Kim, J., Lee, J., Yeom, G. Y., Lee, S., Yu, H-Y., Choi, C. & Park, J. H., 2016 Jun 22, In : Advanced Materials. p. 4824-4831 8 p.

Research output: Contribution to journalArticle

65 Citations (Scopus)

Ar plasma treatment for III-V semiconductor-based transistor source/drain contact resistance reduction

Kim, S. H., Kim, S. W., Kim, G. S., Kim, J., Park, J. H. & Yu, H-Y., 2016 Oct 1, In : Journal of Nanoscience and Nanotechnology. 16, 10, p. 10389-10392 4 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Asymmetrically contacted germanium photodiode using a metal-interlayer-semiconductor-metal structure for extremely large dark current suppression

Zang, H. J., Kim, G. S., Park, G. J., Choi, Y. S. & Yu, H-Y., 2016 Aug 15, In : Optics Letters. 41, 16, p. 3686-3689 4 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Contact resistance reduction using dielectric materials of nanoscale thickness on silicon for monolithic 3D integration

Kim, S. H., Kim, G. S., Oh, S., Park, J. H. & Yu, H-Y., 2016 Dec 1, In : Journal of Nanoscience and Nanotechnology. 16, 12, p. 12764-12767 4 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack

Kim, G. S., Kim, S. W., Kim, S. H., Park, J., Seo, Y., Cho, B. J., Shin, C., Shim, J. H. & Yu, H-Y., 2016 Dec 28, In : ACS Applied Materials and Interfaces. 8, 51, p. 35419-35425 7 p.

Research output: Contribution to journalArticle

21 Citations (Scopus)

Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure

Kim, G. S., Yoo, G., Seo, Y., Kim, S. H., Cho, K., Cho, B. J., Shin, C., Park, J. H. & Yu, H-Y., 2016 Jun 1, In : IEEE Electron Device Letters. 37, 6, p. 709-712 4 p., 7460191.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

Ahn, J., Kim, J. K., Kim, S. W., Kim, G. S., Shin, C., Kim, J-K., Cho, B. J. & Yu, H-Y., 2016 Jun 1, In : IEEE Electron Device Letters. 37, 6, p. 705-708 4 p., 7451242.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device

Choi, H., Lee, H., Park, J., Yu, H-Y., Kim, T. G. & Shin, C., 2016 Nov 14, In : Applied Physics Letters. 109, 20, 203505.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

Park, H. Y., Jung, W. S., Kang, D. H., Jeon, J., Yoo, G., Park, Y., Lee, J., Jang, Y. H., Lee, J., Park, S., Yu, H-Y., Shin, B., Lee, S. & Park, J. H., 2016, In : Advanced Materials. 28, 5, p. 864-870 7 p.

Research output: Contribution to journalArticle

36 Citations (Scopus)

Non-alloyed ohmic contacts on GaAs using metal-interlayer-semiconductor structure with SF6 plasma treatment

Kim, S. H., Kim, G. S., Kim, S. W., Kim, J. K., Choi, C., Park, J. H., Choi, R. & Yu, H-Y., 2016 Apr 1, In : IEEE Electron Device Letters. 37, 4, p. 373-376 4 p., 2524470.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET with Metal-Interlayer-Semiconductor Source/Drain

Shin, C., Kim, J. K., Kim, G. S., Lee, H., Shin, C., Kim, J-K., Cho, B. J. & Yu, H-Y., 2016 Nov 1, In : IEEE Transactions on Electron Devices. 63, 11, p. 4167-4172 6 p., 7571111.

Research output: Contribution to journalArticle

11 Citations (Scopus)

The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction

Kim, S. W., Kim, S. H., Kim, G. S., Choi, C., Choi, R. & Yu, H-Y., 2016 Dec 28, In : ACS Applied Materials and Interfaces. 8, 51, p. 35614-35620 7 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

The effect of post-fabrication annealing on an amorphous IGZO visible-light photodetector

Park, Y., Park, H. Y., Kang, D. H., Kim, G. S., Lim, D., Yu, H-Y., Choi, C. & Park, J. H., 2016, In : Journal of Nanoscience and Nanotechnology. 16, 11, p. 11745-11749 5 p.

Research output: Contribution to journalArticle

Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions

Shim, J., Yoo, G., Kang, D. H., Jung, W. S., Byun, Y. C., Kim, H., Kang, W. T., Yu, W. J., Yu, H-Y., Park, Y. & Park, J. H., 2016 Jan 1, In : IEEE Electron Device Letters. 37, 1, p. 4-7 4 p., 7317745.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Threshold voltage variation-immune FinFET design with metal-interlayer-semiconductor source/drain structure

Shin, C., Kim, J. K., Shin, C., Kim, J-K. & Yu, H-Y., 2016 Jun 1, In : Current Applied Physics. 16, 6, p. 618-622 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2015

Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene

Park, H. Y., Yoon, J. S., Jeon, J., Kim, J., Jo, S. H., Yu, H-Y., Lee, S. & Park, J. H., 2015 Jul 1, In : Organic Electronics: physics, materials, applications. 22, p. 117-121 5 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)