Jae-Sung Rieh

Research output

Research output per year 1997 2002 2003 2004 2005 2006 2007 2009 2011 2012 2013 2014 2015 2017 2022 2023

• 106 Article
• 51 Conference contribution
• 11 Paper
• 9 Chapter
• 20 More
  • 9 Conference article
  • 7 Editorial
  • 2 Review article
  • 1 Comment/debate
  • 1 Letter

Research output per year

Research output per year

Search results

• 2022

  SiGe HBTs

  Rieh, J. S. & Momeni, O., 2022, Springer Series in Optical Sciences. Springer Science and Business Media Deutschland GmbH, p. 201-234 34 p. (Springer Series in Optical Sciences; vol. 234).

  Research output: Chapter in Book/Report/Conference proceeding › Chapter

  • Breakdown Voltage 100%
  • Heterojunction bipolar transistors 79%
  • Current Gain 59%
  • Fluorescence Maxima 44%
  • Bipolar transistors 35%
• 2017

  SiGe HBT technology and circuits for THz applications

  Rieh, J-S., 2017 Jan 1, HighSpeed Devices and Circuits with THz Applications. CRC Press, p. 67-91 25 p.

  Research output: Chapter in Book/Report/Conference proceeding › Chapter

  • Heterojunction bipolar transistors 100%
  • bipolar transistors 91%
  • heterojunctions 74%
  • Networks (circuits) 46%
  • radio frequencies 36%
• 2014

  Compact Solid-State Electronic Terahertz Devices and Circuits

  Rieh, J. S., Yoon, D. & Yun, J., 2014 Jan 1, Terahertz Biomedical Science and Technology. CRC Press, p. 67-91 25 p.

  Research output: Chapter in Book/Report/Conference proceeding › Chapter

  • Electronic states 100%
  • Diagnostic Imaging 65%
  • Spectrum Analysis 61%
  • solid state 47%
  • Equipment and Supplies 37%
  1 Citation (Scopus)
• 2012

  Recent advances in solid-state electronic terahertz systems

  Rieh, J. S., Kim, D. H., Kim, K. & Kim, H., 2012 Jan 1, Convergence of Terahertz Sciences in Biomedical Systems. Springer Netherlands, p. 129-146 18 p.

  Research output: Chapter in Book/Report/Conference proceeding › Chapter

  • Electronic states 100%
  • Photons 73%
  • Frequency bands 55%
  • Wavelength 55%
  • Infrared radiation 54%
  1 Citation (Scopus)
• 2011

  SiGe/Si Heterojunction Bipolar Transistors and Circuits

  Rieh, J-S., 2011 Jan 1, Comprehensive Semiconductor Science and Technology. Elsevier Inc., Vol. 1-6. p. 1-51 51 p.

  Research output: Chapter in Book/Report/Conference proceeding › Chapter

  • bipolar transistors 100%
  • heterojunctions 81%
  • radio frequencies 53%
  • histories 25%
  • direct current 24%
• 2007

  Self-heating and thermal effects

  Rieh, J-S., 2007 Jan 1, Silicon Heterostructure Devices. CRC Press, p. 14-1-14-13

  Research output: Chapter in Book/Report/Conference proceeding › Chapter

  • Thermal effects 100%
  • Heating 70%
  • Phonons 34%
  • Scattering 20%
  • Lattice vibrations 20%

• SiGe HBT performance limits

  Freeman, G., Stricker, A., Greenberg, D. R. & Rieh, J-S., 2007 Jan 1, Silicon Heterostructure Devices. CRC Press, p. 16-1-16-12

  Research output: Chapter in Book/Report/Conference proceeding › Chapter

  • Heterojunction bipolar transistors 100%
  • Epitaxial growth 29%
  • Carrier transport 16%
  • Bipolar transistors 12%
  • Doping (additives) 11%
• 2005

  Self-heating and thermal effects

  Rieh, J-S., 2005 Jan 1, Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy. CRC Press, p. 4.12-539-4.12-552

  Research output: Chapter in Book/Report/Conference proceeding › Chapter

• SiGe HBT performance limits

  Freeman, G., Stricker, A., Greenberg, D. R. & Rieh, J-S., 2005 Jan 1, Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy. CRC Press, p. 4.14-571-4.14-582

  Research output: Chapter in Book/Report/Conference proceeding › Chapter