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Fingerprint Dive into the research topics where Ji Hyun Kim is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 4 Similar Profiles
High electron mobility transistors Engineering & Materials Science
high electron mobility transistors Physics & Astronomy
light emitting diodes Physics & Astronomy
Proton irradiation Engineering & Materials Science
graphene Physics & Astronomy
proton irradiation Physics & Astronomy
Light emitting diodes Engineering & Materials Science
Graphite Chemical Compounds

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Research Output 1992 2019

  • 6929 Citations
  • 40 h-Index
  • 311 Article
  • 34 Conference contribution
  • 5 Chapter
  • 3 Review article

Auto-masked surface texturing of kerf-loss free silicon wafers using hexafluoroisopropanol in a capacitively coupled plasma etching system

Kim, S., Park, J. S., Kim, J. H., Kim, C. K. & Kim, J. H., 2019 Jan 1, In : ECS Journal of Solid State Science and Technology. 8, 4, p. Q76-Q79

Research output: Contribution to journalArticle

Plasma etching
Texturing
Global warming
Silicon wafers
Silicon

Controlling the threshold voltage of β-Ga2O3 field-effect transistors: Via remote fluorine plasma treatment

Kim, J., Tadjer, M. J., Mastro, M. A. & Kim, J. H., 2019 Jan 1, In : Journal of Materials Chemistry C. 7, 29, p. 8855-8860 6 p.

Research output: Contribution to journalArticle

MISFET devices
Fluorine
Field effect transistors
Threshold voltage
Plasmas
5 Citations (Scopus)

Defect states determining dynamic trapping-detrapping in β-Ga 2 O 3 field-effect transistors

Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Chernykh, S. V., Oh, S., Pearton, S. J., Ren, F., Kochkova, A. & Kim, J. H., 2019 Jan 1, In : ECS Journal of Solid State Science and Technology. 8, 7, p. Q3013-Q3018

Research output: Contribution to journalArticle

Open Access
Field effect transistors
Nanobelts
Electron traps
Defects
Deep level transient spectroscopy
Open Access
MESFET devices
Rapid thermal annealing
Electric properties
Annealing
Electrodes
1 Citation (Scopus)

Field-plate engineering for high breakdown voltage β-Ga 2 O 3 nanolayer field-effect transistors

Bae, J., Kim, H. W., Kang, I. H. & Kim, J. H., 2019 Jan 1, In : RSC Advances. 9, 17, p. 9678-9683 6 p.

Research output: Contribution to journalArticle

Open Access
Field effect transistors
Electric breakdown
Electric fields
Nanoelectronics
Power electronics