• 7945 Citations
  • 43 h-Index
1992 …2020

Research output per year

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Research Output

2020

An in-plane WSe2p-n homojunction two-dimensional diode by laser-induced doping

Yang, S., Lee, G., Kim, J., Yang, S., Lee, C. H. & Kim, J., 2020 Jul 7, In : Journal of Materials Chemistry C. 8, 25, p. 8393-8398 6 p.

Research output: Contribution to journalArticle

Dual-field plated β-Ga2O3 nano-FETs with an off-state breakdown voltage exceeding 400 v

Bae, J., Kim, H. W., Kang, I. H. & Kim, J., 2020 Feb 28, In : Journal of Materials Chemistry C. 8, 8, p. 2687-2692 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Programmable Synapse-Like MoS2 Field-Effect Transistors Phase-Engineered by Dynamic Lithium Ion Modulation

Park, H. & Kim, J., 2020 Jan 1, (Accepted/In press) In : Advanced Electronic Materials.

Research output: Contribution to journalArticle

Selective electrochemical etching of epitaxial aluminum nitride thin film

Choi, Y., Choi, R. & Kim, J., 2020 Apr 15, In : Applied Surface Science. 509, 145279.

Research output: Contribution to journalArticle

2019

60Co gamma ray damage in homoepitaxial β-Ga2O3 Schottky rectifiers

Yang, J., Koller, G. J., Fares, C., Ren, F., Pearton, S. J., Bae, J., Kim, J. & Smith, D. J., 2019 Jan 1, In : ECS Journal of Solid State Science and Technology. 8, 7, p. Q3041-Q3045

Research output: Contribution to journalArticle

Open Access
4 Citations (Scopus)

Annealing of proton and alpha particle damage in Au-W/β-Ga2O3 rectifiers

Xian, M., Fares, C., Bae, J., Kim, J., Ren, F. & Pearton, S. J., 2019 Jan 1, In : ECS Journal of Solid State Science and Technology. 8, 12, p. P799-P804

Research output: Contribution to journalArticle

Auto-masked surface texturing of kerf-loss free silicon wafers using hexafluoroisopropanol in a capacitively coupled plasma etching system

Kim, S., Park, J. S., Kim, J. H., Kim, C. K. & Kim, J. H., 2019 Jan 1, In : ECS Journal of Solid State Science and Technology. 8, 4, p. Q76-Q79

Research output: Contribution to journalArticle

Controlling the threshold voltage of β-Ga2O3 field-effect transistors: Via remote fluorine plasma treatment

Kim, J., Tadjer, M. J., Mastro, M. A. & Kim, J. H., 2019 Jan 1, In : Journal of Materials Chemistry C. 7, 29, p. 8855-8860 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Defect states determining dynamic trapping-detrapping in β-Ga 2 O 3 field-effect transistors

Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Chernykh, S. V., Oh, S., Pearton, S. J., Ren, F., Kochkova, A. & Kim, J. H., 2019 Jan 1, In : ECS Journal of Solid State Science and Technology. 8, 7, p. Q3013-Q3018

Research output: Contribution to journalArticle

Open Access
7 Citations (Scopus)
Open Access

Field-plate engineering for high breakdown voltage β-Ga 2 O 3 nanolayer field-effect transistors

Bae, J., Kim, H. W., Kang, I. H. & Kim, J. H., 2019 Jan 1, In : RSC Advances. 9, 17, p. 9678-9683 6 p.

Research output: Contribution to journalArticle

Open Access
5 Citations (Scopus)

High-energy proton irradiation damage on two-dimensional hexagonal boron nitride

Lee, D., Yoo, S., Bae, J., Park, H., Kang, K. & Kim, J. H., 2019 Jan 1, In : RSC Advances. 9, 32, p. 18326-18332 7 p.

Research output: Contribution to journalArticle

Open Access

Nafion membranes with a sulfonated organic additive for the use in vanadium redox flow batteries

Lee, Y., Kim, S., Hempelmann, R., Jang, J. H., Kim, H. J., Han, J., Kim, J. & Henkensmeier, D., 2019 Jun 5, In : Journal of Applied Polymer Science. 136, 21, 47547.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Photo-enhanced acid chemical etching of high-quality aluminum nitride grown by metal-organic chemical vapor deposition

Choi, Y. H., Baik, K. H., Choi, R., Oh, J. & Kim, J. H., 2019 Jan 1, In : ECS Journal of Solid State Science and Technology. 8, 3, p. N42-N46

Research output: Contribution to journalArticle

1 Citation (Scopus)

Programmable Multilevel Memtransistors Based on van der Waals Heterostructures

Park, H., Mastro, M. A., Tadjer, M. J. & Kim, J., 2019 Oct 1, In : Advanced Electronic Materials. 5, 10, 1900333.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Radiation damage effects in Ga2O3 materials and devices

Kim, J. H., Pearton, S. J., Fares, C., Yang, J., Ren, F., Kim, S. & Polyakov, A. Y., 2019 Jan 1, In : Journal of Materials Chemistry C. 7, 1, p. 10-24 15 p.

Research output: Contribution to journalReview article

27 Citations (Scopus)

Ultrahigh deep-UV sensitivity in graphene-gated β-Ga 2 O 3 phototransistors

Kim, S., Oh, S. & Kim, J. H., 2019 Jan 1, In : ACS Photonics.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Will surface effects dominate in quasi-two-dimensional gallium oxide for electronic and photonic devices?

Kim, J., Ren, F. & Pearton, S. J., 2019 Nov, In : Nanoscale Horizons. 4, 6, p. 1251-1255 5 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
2018

10 MeV proton damage in β-Ga2O3 Schottky rectifiers

Yang, J., Chen, Z., Ren, F., Pearton, S. J., Yang, G., Kim, J. H., Lee, J., Flitsiyan, E., Chernyak, L. & Kuramata, A., 2018 Jan 1, In : Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 36, 1, 011206.

Research output: Contribution to journalArticle

16 Citations (Scopus)

2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification

Lee, G., Pearton, S. J., Ren, F. & Kim, J. H., 2018 Jan 1, (Accepted/In press) In : Advanced Electronic Materials. 1800745.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Anion-conductive membranes based on 2-mesityl-benzimidazolium functionalised poly(2,6-dimethyl-1,4-phenylene oxide) and their use in alkaline water electrolysis

Marinkas, A., Struźyńska-Piron, I., Lee, Y., Lim, A., Park, H. S., Jang, J. H., Kim, H. J., Kim, J. H., Maljusch, A., Conradi, O. & Henkensmeier, D., 2018 Jun 6, In : Polymer. 145, p. 242-251 10 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)

A review of Ga2O3 materials, processing, and devices

Pearton, S. J., Yang, J., Cary, P. H., Ren, F., Kim, J. H., Tadjer, M. J. & Mastro, M. A., 2018 Mar 1, In : Applied Physics Reviews. 5, 1, 011301.

Research output: Contribution to journalReview article

462 Citations (Scopus)

Bifacial CdS/CdTe thin-film solar cells using a transparent silver nanowire/indium tin oxide back contact

Kwon, Y., Seo, J., Kang, Y. M., Kim, D. & Kim, J. H., 2018 Jan 22, In : Optics Express. 26, 2, p. A30-A38

Research output: Contribution to journalArticle

10 Citations (Scopus)

Bifacial CdS/CdTe thin-film solar cells with copper nanowires as a transparent back contact

Byun, E., Seo, J., Kim, D. & Kim, J. H., 2018 Sep 3, In : Optics Express. 26, 18, p. 23594-23601 8 p.

Research output: Contribution to journalArticle

Chemical doping effects of gas molecules on black phosphorus field-effect transistors

Kim, S., Lee, G. & Kim, J. H., 2018 Jan 1, In : ECS Journal of Solid State Science and Technology. 7, 7, p. Q3065-Q3069

Research output: Contribution to journalArticle

4 Citations (Scopus)

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yakimov, E. B., Pearton, S. J., Fares, C., Yang, J., Ren, F., Kim, J. H., Lagov, P. B., Stolbunov, V. S. & Kochkova, A., 2018 Aug 27, In : Applied Physics Letters. 113, 9, 092102.

Research output: Contribution to journalArticle

21 Citations (Scopus)

Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current

Yakimov, E. B., Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yang, J., Ren, F., Yang, G., Kim, J. H. & Pearton, S. J., 2018 May 14, In : Journal of Applied Physics. 123, 18, 185704.

Research output: Contribution to journalArticle

18 Citations (Scopus)

Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

Fares, C., Ren, F., Pearton, S. J., Yang, G., Kim, J. H., Lo, C. F. & Wayne Johnson, J., 2018 Jul 1, In : Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 36, 4, 041203.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

Fares, C., Ren, F., Pearton, S. J., Yang, G., Kim, J. H., Lo, C. F. & Johnson, J. W., 2018 Sep 1, In : Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 36, 5, 052202.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga2O3 Schottky rectifiers

Yang, J., Fares, C., Guan, Y., Ren, F., Pearton, S. J., Bae, J., Kim, J. H. & Kuramata, A., 2018 May 1, In : Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 36, 3, 031205.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Enhancing ambipolar carrier transport of black phosphorus field-effect transistors with Ni-P alloy contacts

Park, H. & Kim, J. H., 2018 Jan 1, In : Physical Chemistry Chemical Physics. 20, 35, p. 22439-22444 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Ga2O3 nanobelt devices

Kim, J., Oh, S., Kim, S. & Kim, J., 2018 Oct 26, Gallium Oxide: Technology, Devices and Applications. Elsevier, p. 331-368 38 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

Kim, J., Mastro, M. A., Tadjer, M. J. & Kim, J. H., 2018 Sep 5, In : ACS Applied Materials and Interfaces. 10, 35, p. 29724-29729 6 p.

Research output: Contribution to journalArticle

28 Citations (Scopus)

High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

Bae, J., Kim, H. W., Kang, I. H., Yang, G. & Kim, J. H., 2018 Mar 19, In : Applied Physics Letters. 112, 12, 122102.

Research output: Contribution to journalArticle

44 Citations (Scopus)

High gain β-Ga2O3 solar-blind Schottky barrier photodiodes via carrier multiplication process

Oh, S., Kim, H. W. & Kim, J. H., 2018 Jan 1, In : ECS Journal of Solid State Science and Technology. 7, 11, p. Q196-Q200

Research output: Contribution to journalArticle

2 Citations (Scopus)

High performance black phosphorus field-effect transistors with vacuum-annealed low-resistance Ohmic contact

Park, H., Bae, J. & Kim, J. H., 2018 Aug 20, 2018 76th Device Research Conference, DRC 2018. Institute of Electrical and Electronics Engineers Inc., Vol. 2018-June. 8442273

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

High Responsivity β-Ga2O3 Metal-Semiconductor-Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes

Oh, S., Kim, C. K. & Kim, J. H., 2018 Mar 21, In : ACS Photonics. 5, 3, p. 1123-1128 6 p.

Research output: Contribution to journalArticle

67 Citations (Scopus)

Hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) Ga2O3 single crystals

Jang, S., Jung, S., Kim, J. H., Ren, F., Pearton, S. J. & Baik, K. H., 2018 Jan 1, In : ECS Journal of Solid State Science and Technology. 7, 7, p. Q3180-Q3182

Research output: Contribution to journalArticle

6 Citations (Scopus)

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

Pearton, S. J., Ren, F., Tadjer, M. & Kim, J. H., 2018 Dec 14, In : Journal of Applied Physics. 124, 22, 220901.

Research output: Contribution to journalReview article

71 Citations (Scopus)

Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yakimov, E. B., Yang, J., Ren, F., Yang, G., Kim, J. H., Kuramata, A. & Pearton, S. J., 2018 Jan 15, In : Applied Physics Letters. 112, 3, 032107.

Research output: Contribution to journalArticle

41 Citations (Scopus)

Radiation and process-induced damage in Ga2O3

Pearton, S. J., Yang, J., Ren, F., Yang, G., Kim, J. H., Stavola, M. & Kuramata, A., 2018 Jan 1, Gallium Nitride Materials and Devices XIII. Fujioka, H., Morkoc, H. & Chyi, J-I. (eds.). SPIE, Vol. 10532. 105320K

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Rapid and accurate measurement of ideality factor and parasitic resistances of thin film solar cells

Park, S., Kim, S. M., Park, S. J., Bae, S., Park, H., Nam, J. G., Lee, D., Yang, J. Y., Kim, D. S., Mo, C., Kim, Y. S., Kim, J., Lee, H. S. & Kang, Y., 2018 Jan 1, In : ECS Journal of Solid State Science and Technology. 7, 6, p. Q105-Q108

Research output: Contribution to journalArticle

1 Citation (Scopus)

Reducing the contact and channel resistances of black phosphorus: Via low-temperature vacuum annealing

Park, H., Son, J. & Kim, J. H., 2018 Jan 1, In : Journal of Materials Chemistry C. 6, 6, p. 1567-1572 6 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Study on the formation of graphene by ion implantation on Cu, Ni and CuNi alloy

Kim, J., Kim, H. Y., Jeon, J. H., An, S., Hong, J. & Kim, J. H., 2018 Sep 1, In : Applied Surface Science. 451, p. 162-168 7 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)
8 Citations (Scopus)

Two-Dimensionally Layered p-Black Phosphorus/n-MoS2/p-Black Phosphorus Heterojunctions

Lee, G., Pearton, S. J., Ren, F. & Kim, J. H., 2018 Mar 28, In : ACS Applied Materials and Interfaces. 10, 12, p. 10347-10352 6 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)
2017

1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers

Yang, J., Ren, F., Pearton, S. J., Yang, G., Kim, J. H. & Kuramata, A., 2017 May 1, In : Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 35, 3, 031208.

Research output: Contribution to journalArticle

30 Citations (Scopus)

Advances in Ga2O3 processing and devices

Yang, J., Carey, P. H., Ahn, S., Ren, F., Jang, S., Kim, J. H., Hays, D., Pearton, S. J. & Kuramata, A., 2017 Jan 1, ECS Transactions. Bhansali, S., Brankovic, S., Buttry, D. A., Chu, D., Imahori, H., Katayama, H., Leonte, O., Mukerjee, S., Mukundan, R., Oren, Y., Romankiw, L., Sharma, N., Simonian, A., Trulove, P. C., Vaughey, J. T., Winter, M., Bartlett, P. N., Di Noto, V., Doeff, M., Druffel, T., Fenton, J. M., Fergus, J., Fukunaka, Y., Itagaki, M., Koehne, J., Kostecki, R., Lynch, R. P., Milosev, I., Narayan, S. R., Subramanian, V., Tatsuma, T., Wu, N., Chen, Z., Haverhals, L. M., Hesketh, P., Hillier, A. C., Inaba, M., Krumdick, G., Leddy, J., Manivannan, M., Maurice, V., Mitra, S., Muldoon, J., Noel, J., Rajeshwar, K., Subramanian, V. R., Suroviec, A. H., Suto, K., Zangari, G., Allongue, P., Birbilis, N., Boltalina, O. V., Calabrese Barton, S., Chaitanya, V., Chidambaram, D., Hite, J. K., Lee, J. J., Mantz, R. A., Mauzeroll, J., Minteer, S. D., Orazem, M. E., Ramasamy, R. P., Riemer, D. P., Roeper, D., Rohwerder, M., Sailor, M. J., Schwartz, D. T., Staser, J. A., Wu, G., Xu, H., Alkire, R., Anderson, T. J., Bayachou, M., Bocarsly, A. B., Choi, J. W., Innocenti, M., Kilgore, S. H., Kim, D. J., Kulesza, P. J., Lu, Y. C., Marcus, P., Mauter, M., Nicholas, J. D., Pylypenko, S., Rhodes, C., Soleymani, L., Tao, M., Xing, Y., Abbott, A. P., Chin, B. A., Cliffel, D. E., Douglas, E. A., Edstrom, K., Hamada, H., McMurray, H. N., Meng, Y. S., Miller, E. L., Navaei, M., Nonnenmann, S. S., O'Dwyer, C., Pharkya, P., Rotkin, S. V., Rupp, J. L. M., Williams, G., Bock, C., Buchheit, R., Cheek, G. T., Deligianni, H., Johnson, C., Park, J. G., Pintauro, P. N., Smith, K. C., Vanysek, P., Wang, H., Whitacre, J. F., Xiao, J., Carter, M. T., Dimitrov, N., Fransaer, J., Guyomard, D., Lucht, B. L., Nagahara, L., Natishan, P. M., Sekhar, P. K., Smith, D. K., Stafford, G. R., Sundaram, K. B., Vasiljevic, N., Virtanen, S., Wang, W., Wood, D. L. & Yang, J. J. (eds.). 10 ed. Electrochemical Society Inc., Vol. 80. p. 959-972 14 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

A titanium carbide-derived novel tetrafluoromethane adsorbent with outstanding adsorption performance

Choi, S. W., Lee, D. H., Kim, J., Kim, J. H., Park, J. H., Beum, H. T., Lim, D-S. & Lee, K. B., 2017, In : Chemical Engineering Journal. 311, p. 227-235 9 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)