• Source: Scopus
  • Calculated based on no. of publications stored in Pure and citations from Scopus
1992 …2020

Research output per year

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  • 2018

    High performance black phosphorus field-effect transistors with vacuum-annealed low-resistance Ohmic contact

    Park, H., Bae, J. & Kim, J. H., 2018 Aug 20, 2018 76th Device Research Conference, DRC 2018. Institute of Electrical and Electronics Engineers Inc., Vol. 2018-June. 8442273

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • Radiation and process-induced damage in Ga2O3

    Pearton, S. J., Yang, J., Ren, F., Yang, G., Kim, J. H., Stavola, M. & Kuramata, A., 2018 Jan 1, Gallium Nitride Materials and Devices XIII. Fujioka, H., Morkoc, H. & Chyi, J-I. (eds.). SPIE, Vol. 10532. 105320K

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • 2017

    Advances in Ga2O3 processing and devices

    Yang, J., Carey, P. H., Ahn, S., Ren, F., Jang, S., Kim, J. H., Hays, D., Pearton, S. J. & Kuramata, A., 2017 Jan 1, ECS Transactions. Bhansali, S., Brankovic, S., Buttry, D. A., Chu, D., Imahori, H., Katayama, H., Leonte, O., Mukerjee, S., Mukundan, R., Oren, Y., Romankiw, L., Sharma, N., Simonian, A., Trulove, P. C., Vaughey, J. T., Winter, M., Bartlett, P. N., Di Noto, V., Doeff, M., Druffel, T., Fenton, J. M., Fergus, J., Fukunaka, Y., Itagaki, M., Koehne, J., Kostecki, R., Lynch, R. P., Milosev, I., Narayan, S. R., Subramanian, V., Tatsuma, T., Wu, N., Chen, Z., Haverhals, L. M., Hesketh, P., Hillier, A. C., Inaba, M., Krumdick, G., Leddy, J., Manivannan, M., Maurice, V., Mitra, S., Muldoon, J., Noel, J., Rajeshwar, K., Subramanian, V. R., Suroviec, A. H., Suto, K., Zangari, G., Allongue, P., Birbilis, N., Boltalina, O. V., Calabrese Barton, S., Chaitanya, V., Chidambaram, D., Hite, J. K., Lee, J. J., Mantz, R. A., Mauzeroll, J., Minteer, S. D., Orazem, M. E., Ramasamy, R. P., Riemer, D. P., Roeper, D., Rohwerder, M., Sailor, M. J., Schwartz, D. T., Staser, J. A., Wu, G., Xu, H., Alkire, R., Anderson, T. J., Bayachou, M., Bocarsly, A. B., Choi, J. W., Innocenti, M., Kilgore, S. H., Kim, D. J., Kulesza, P. J., Lu, Y. C., Marcus, P., Mauter, M., Nicholas, J. D., Pylypenko, S., Rhodes, C., Soleymani, L., Tao, M., Xing, Y., Abbott, A. P., Chin, B. A., Cliffel, D. E., Douglas, E. A., Edstrom, K., Hamada, H., McMurray, H. N., Meng, Y. S., Miller, E. L., Navaei, M., Nonnenmann, S. S., O'Dwyer, C., Pharkya, P., Rotkin, S. V., Rupp, J. L. M., Williams, G., Bock, C., Buchheit, R., Cheek, G. T., Deligianni, H., Johnson, C., Park, J. G., Pintauro, P. N., Smith, K. C., Vanysek, P., Wang, H., Whitacre, J. F., Xiao, J., Carter, M. T., Dimitrov, N., Fransaer, J., Guyomard, D., Lucht, B. L., Nagahara, L., Natishan, P. M., Sekhar, P. K., Smith, D. K., Stafford, G. R., Sundaram, K. B., Vasiljevic, N., Virtanen, S., Wang, W., Wood, D. L. & Yang, J. J. (eds.). 10 ed. Electrochemical Society Inc., Vol. 80. p. 959-972 14 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • 2015

    Analysis of patterned defects on graphene using micro-Raman spectroscopy and liquid crystals

    Yang, G., Oh, S. & Kim, J. H., 2015, ECS Transactions. 1 ed. Electrochemical Society Inc., Vol. 66. p. 281-284 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Study on effect of proton irradiation energy in AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

    Ahn, S., Dong, C., Zhu, W., Kim, B. J., Hwang, Y. H., Ren, F., Pearton, S. J., Yang, G., Kim, J. H. & Kravchenko, I., 2015, ECS Transactions. 14 ed. Electrochemical Society Inc., Vol. 69. p. 129-135 7 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)
  • 2014

    Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

    Xi, Y. Y., Hwang, Y. H., Hsieh, Y. L., Li, S., Ren, F., Pearton, S. J., Patrick, E., Law, M. E., Yang, G., Kim, H. Y., Kim, J. H., Baca, A. G., Allerman, A. A. & Sanchez, C., 2014, ECS Transactions. 4 ed. Electrochemical Society Inc., Vol. 61. p. 179-185 7 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)
  • 2013

    Nickel foam as a substrate for III-nitride nanowire growth

    Mastro, M. A., Nepal, N., Kub, F., Hite, J. K., Kim, J. & Eddy, C. R., 2013, Compound Semiconductors: Thin-Film Photovoltaics, LEDs, and Smart Energy Controls. p. 311-316 6 p. (Materials Research Society Symposium Proceedings; vol. 1538).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Radiation damage in GaN-based materials and devices

    Patrick, E., Law, M. E., Pearton, S. J., Deist, R., Ren, F., Liu, L., Polyakov, A. Y. & Kim, J. H., 2013 Jan 1, 8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8. John Wiley and Sons Inc., Vol. 2. p. 1753-1764 12 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors

    Liu, L., Lo, C. F., Xi, Y. Y., Wang, Y. X., Kim, H. Y., Kim, J., Pearton, S. J., Laboutin, O., Cao, Y., Johnson, J. W., Kravchenko, I. I. & Ren, F., 2013, Gallium Nitride Materials and Devices VIII. 86250W. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 8625).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • 2011

    Plasmonically-enhanced emission from an inverted GaN light emitting diode

    Mastro, M. A., Kim, B. J., Freitas, J. A., Caldwell, J. D., Rendell, R., Hite, J., Eddy, C. R. & Kim, J., 2011, Plasmonics: Metallic Nanostructures and Their Optical Properties IX. 809615. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 8096).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Space charge limited current and polarization in AlGaN/GaN nanowires

    Mastro, M. A., Kim, H. Y., Ahn, J., Kim, J., Hite, J. K. & Eddy, C. R., 2011, State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6 ed. p. 33-38 6 p. (ECS Transactions; vol. 41, no. 6).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2010

    Quasi-ballistic hole transport in an AlGaN/GaN nanowire

    Mastro, M. A., Kim, H. Y., Ahn, J., Kim, J., Hite, J. & Eddy, C. R., 2010, Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52. 4 ed. p. 47-52 6 p. (ECS Transactions; vol. 28, no. 4).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • 2007

    AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield

    Anderson, T. J., Ren, F., Voss, L., Hlad, M., Gila, B. P., Pearton, S. J., Kim, J., Lin, J., Bove, P., Lahreche, H., Thuret, J. & Langer, R., 2007, 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007. p. 137-140 4 p. (2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2005

    Spin injection and spin loss in GaMnN/InGaN light-emitting diodes

    Buyanova, I. A., Izadifard, M., Chen, W. M., Kim, J., Ren, F., Thaler, G., Abernathy, C. R., Pearton, S. J., Pan, C. H., Chen, G. H., Chyi, J. H. & Zavada, J. M., 2005 Jun 30, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. p. 1399-1400 2 p. (AIP Conference Proceedings; vol. 772).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)
  • 2003

    High temperature GaN based Schottky diode gas sensors

    Ren, F., Kim, J. H., Gila, B. P., Abernathy, C. R., Pearton, S. J., Baca, A. G., Briggs, R. D. & Chung, G. Y., 2003, 2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., Vol. 2003-January. p. 61-62 2 p. 1239906

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2002

    Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors

    Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A. & Irokawa, Y., 2002, Proceedings IEEE Lester Eastman Conference on High Performance Devices. p. 477-486 10 p. (Proceedings IEEE Lester Eastman Conference on High Performance Devices).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution