• Source: Scopus
  • Calculated based on no. of publications stored in Pure and citations from Scopus
1992 …2020

Research output per year

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  • 2003

    Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors

    Kang, B. S., Kim, S., Kim, J., Ren, F., Baik, K., Pearton, S. J., Gila, B. P., Abernathy, C. R., Pan, C. C., Chen, G. T., Chyi, J. I., Chandrasekaran, V., Sheplak, M., Nishida, T. & Chu, S. N. G., 2003, p. 292-297. 6 p.

    Research output: Contribution to conferencePaperpeer-review

  • Gan power rectifiers and field-effect transistors on free-standing gan substrates

    Irokawa, Y., Luo, B., Kim, J., Kang, B. S., Laroche, J. R., Ren, F., Pan, C. C., Chen, G. T., Chyi, J. I., Park, S. S., Park, Y. J., Gila, B. P., Abernathy, C. R., Baik, K. H. & Pearton, S. J., 2003, p. 306-320. 15 p.

    Research output: Contribution to conferencePaperpeer-review

  • Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics

    Gila, B. P., Luo, B., Kim, J., Mehandru, R., Laroche, J. R., Onstine, A. H., Abemathy, C. R., Ren, F. & Pearton, S. J., 2003, p. 212-223. 12 p.

    Research output: Contribution to conferencePaperpeer-review

    1 Citation (Scopus)
  • Growth of MgCaO on GaN

    Onstine, A. H., Gila, B. P., Kim, J., Herrero, A., Mehandru, R., Abernathy, C. R., Ren, F. & Pearton, S. J., 2003, p. 344-349. 6 p.

    Research output: Contribution to conferencePaperpeer-review

  • Surface state characterization methods for SiO 2 On 4H-SiC

    Laroche, J. R., Kim, J., Johnson, J. W., Luo, B., Kang, B. S., Mehaadru, R., Irokawa, Y., Pearton, S. J., Chung, G. & Ren, F., 2003, p. 282-291. 10 p.

    Research output: Contribution to conferencePaperpeer-review