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2012
Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))
Lo, C. F., Liu, L., Ren, F., Pearton, S. J., Gila, B. P., Kim, H. Y., Kim, J., Laboutin, O., Cao, Y., Johnson, J. W. & Kravchenko, I. I., 2012 Jul, In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30, 4, 043401.Research output: Contribution to journal › Comment/debate › peer-review