• 7638 Citations
  • 42 h-Index
1992 …2020

Research output per year

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Research Output

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Review article
2019

Radiation damage effects in Ga2O3 materials and devices

Kim, J. H., Pearton, S. J., Fares, C., Yang, J., Ren, F., Kim, S. & Polyakov, A. Y., 2019 Jan 1, In : Journal of Materials Chemistry C. 7, 1, p. 10-24 15 p.

Research output: Contribution to journalReview article

18 Citations (Scopus)
2018

A review of Ga2O3 materials, processing, and devices

Pearton, S. J., Yang, J., Cary, P. H., Ren, F., Kim, J. H., Tadjer, M. J. & Mastro, M. A., 2018 Mar 1, In : Applied Physics Reviews. 5, 1, 011301.

Research output: Contribution to journalReview article

407 Citations (Scopus)

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

Pearton, S. J., Ren, F., Tadjer, M. & Kim, J. H., 2018 Dec 14, In : Journal of Applied Physics. 124, 22, 220901.

Research output: Contribution to journalReview article

60 Citations (Scopus)
2013

Review of radiation damage in GaN-based materials and devices

Pearton, S. J., Deist, R., Ren, F., Liu, L., Polyakov, A. Y. & Kim, J., 2013 Sep 1, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 31, 5, 050801.

Research output: Contribution to journalReview article

126 Citations (Scopus)
2003

Wide band gap ferromagnetic semiconductors and oxides

Pearton, S. J., Abernathy, C. R., Overberg, M. E., Thaler, G. T., Norton, D. P., Theodoropoulou, N., Hebard, A. F., Park, Y. D., Ren, F., Kim, J. & Boatner, L. A., 2003 Jan 1, In : Journal of Applied Physics. 93, 1, p. 1-13 13 p.

Research output: Contribution to journalReview article

883 Citations (Scopus)