• 1218 Citations
  • 16 h-Index
19952017
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Fingerprint Dive into the research topics where Man Young Sung is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 2 Similar Profiles
Insulated gate bipolar transistors (IGBT) Engineering & Materials Science
bipolar transistors Physics & Astronomy
Electrodes Engineering & Materials Science
Electric breakdown Engineering & Materials Science
latch-up Physics & Astronomy
Electric potential Engineering & Materials Science
Organic light emitting diodes (OLED) Engineering & Materials Science
electrodes Physics & Astronomy

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Research Output 1995 2017

  • 1218 Citations
  • 16 h-Index
  • 98 Article
  • 56 Conference contribution
  • 2 Chapter
1 Citation (Scopus)

Investigation of the layout and optical proximity correction effects to control the trench etching process on 4H-SiC

Kyoung, S., Jung, E. S. & Sung, M. Y., 2017 Jul 1, In : Electronic Materials Letters. 13, 4, p. 368-372 5 p.

Research output: Contribution to journalArticle

Etching
Experiments

Edge termination for optimized silicon carbide MOSFET breakdown voltage

Woo, S., Geum, J., Kyoung, S. & Sung, M. Y., 2016, In : Journal of Nanoelectronics and Optoelectronics. 11, 5, p. 585-588 4 p.

Research output: Contribution to journalArticle

Electric breakdown
Silicon carbide
Silicon
Electric fields
Buffers
1 Citation (Scopus)

Improving current density of 4H-SiC junction barrier Schottky diode with wide trench etching

Kyoung, S., Jung, E. S., Kang, T. Y. & Sung, M. Y., 2016, In : Journal of Nanoscience and Nanotechnology. 16, 11, p. 11686-11691 6 p.

Research output: Contribution to journalArticle

Schottky barrier diodes
Schottky diodes
Leakage currents
Etching
Current density

New design rule for high voltage field ring structure

Geum, J., Kyoung, S. & Sung, M. Y., 2016 Dec 1, In : Journal of Nanoscience and Nanotechnology. 16, 12, p. 12897-12899 3 p.

Research output: Contribution to journalArticle

ring structures
Silicon
Electric breakdown
high voltages
electrical faults
18 Citations (Scopus)

Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode

Kyoung, S., Jung, E. S. & Sung, M. Y., 2016 Mar 25, In : Microelectronic Engineering. 154, p. 69-73 5 p.

Research output: Contribution to journalArticle

Schottky barrier diodes
Schottky diodes
inhomogeneity
Annealing
annealing