β-Ga2O3 nanowires synthesized from milled GaN powders

B. C. Kim, K. T. Sun, K. S. Park, K. J. Im, T. Noh, M. Y. Sung, S. Kim, S. Nahm, Y. N. Choi, S. S. Park

Research output: Contribution to journalArticle

90 Citations (Scopus)

Abstract

White-colored materials synthesized by a thermal annealing of milled GaN powders at 930°C in a nitrogen atmosphere were identified to be monoclinic β-Ga2O3 nanowires by x-ray diffraction and scanning electron microscopy. High-resolution transmission electron microscopy revealed that these nanowires are single nanocrystals, and energy dispersive x-ray indicated that these nanomaterials are free of any metals. In addition, bundles of these crystalline nanowires in the rectangular-pole shape are a few centimeters in length.

Original languageEnglish
Pages (from-to)479-481
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number3
DOIs
Publication statusPublished - 2002 Jan 21

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'β-Ga<sub>2</sub>O<sub>3</sub> nanowires synthesized from milled GaN powders'. Together they form a unique fingerprint.

  • Cite this

    Kim, B. C., Sun, K. T., Park, K. S., Im, K. J., Noh, T., Sung, M. Y., Kim, S., Nahm, S., Choi, Y. N., & Park, S. S. (2002). β-Ga2O3 nanowires synthesized from milled GaN powders. Applied Physics Letters, 80(3), 479-481. https://doi.org/10.1063/1.1435073