TY - JOUR
T1 - π-Conjugated organic-based devices with different layered structures produced by the neutral cluster beam deposition method and operating conduction mechanism
AU - Seo, Hoon Seok
AU - Oh, Jeong Do
AU - Kim, Dae Kyu
AU - Shin, Eun Sol
AU - Choi, Jong Ho
PY - 2012/12/19
Y1 - 2012/12/19
N2 - The authors report on the systematic characterization of structural effects of organic complementary inverters based on two -conjugated organic molecules, pentacene and copper hexadecafluorophthalocyanine (F16CuPc). Three classes of inverters with different layered structures in top-contact configuration were produced using the neutral cluster beam deposition method. Their voltage transfer characteristics, gain curves and hysteresis behaviour were characterized with respect to their thickness. Class I inverters, with generic structures of single-layered, p-and n-type (200/180) transistors, exhibited high gains of 12.8 ± 1.0 with sharp inversions. Their two constituent transistors, with hole and electron mobilities of 0.38 cm 2 V-1 s-1 and 7.0 × 10-3 cm2 V-1 s-1, respectively, showed well-coupled carrier conduction during operation. The behaviour of class II and III inverters, with layered heterojunction structures, was independent of upper-layer thickness and did not show hysteresis. The better performances of class II inverters, which showed high gains of 14.4 ± 1.1, were rationalized partly in terms of decreased mobility differences between their constituent transistors. Heterojunction geometries can be applied to obtain high-performance, fast-switching inverters by avoiding direct exposure of the air-sensitive transistors to ambient conditions. The inverters' general operating conduction mechanism is also discussed.
AB - The authors report on the systematic characterization of structural effects of organic complementary inverters based on two -conjugated organic molecules, pentacene and copper hexadecafluorophthalocyanine (F16CuPc). Three classes of inverters with different layered structures in top-contact configuration were produced using the neutral cluster beam deposition method. Their voltage transfer characteristics, gain curves and hysteresis behaviour were characterized with respect to their thickness. Class I inverters, with generic structures of single-layered, p-and n-type (200/180) transistors, exhibited high gains of 12.8 ± 1.0 with sharp inversions. Their two constituent transistors, with hole and electron mobilities of 0.38 cm 2 V-1 s-1 and 7.0 × 10-3 cm2 V-1 s-1, respectively, showed well-coupled carrier conduction during operation. The behaviour of class II and III inverters, with layered heterojunction structures, was independent of upper-layer thickness and did not show hysteresis. The better performances of class II inverters, which showed high gains of 14.4 ± 1.1, were rationalized partly in terms of decreased mobility differences between their constituent transistors. Heterojunction geometries can be applied to obtain high-performance, fast-switching inverters by avoiding direct exposure of the air-sensitive transistors to ambient conditions. The inverters' general operating conduction mechanism is also discussed.
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U2 - 10.1088/0022-3727/45/50/505108
DO - 10.1088/0022-3727/45/50/505108
M3 - Article
AN - SCOPUS:84870225604
SN - 0022-3727
VL - 45
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
IS - 50
M1 - 505108
ER -