10 MeV electrons irradiation effects in variously doped n-GaN

A. Y. Polyakov, In-Hwan Lee, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, N. G. Kolin, A. V. Korulin, V. M. Boiko, S. J. Pearton

Research output: Contribution to journalArticle

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Abstract

We studied 10 MeV electron irradiation effects in a group of n-GaN films grown by standard metalorganic chemical vapor deposition (MOCVD) and by epitaxial lateral overgrowth (ELOG) techniques. The samples were either undoped or Si-doped, so that the shallow donor concentrations ranged from 10 14 cm-3 to 3 × 1018 cm-3. It was found that electron irradiation led to the compensation of n-type conductivity and that the carrier removal rate substantially increased with an increase in the starting donor concentration. For the MOCVD samples, it was observed that the main compensating defect introduced by electrons was a 0.15 eV electron trap detected by admittance spectroscopy. Once the Fermi level crossed the level of these traps two other centers with activation energies of 0.2 and 1 eV were found to contribute to the compensation, so that after high doses, the Fermi level in moderately doped samples was pinned near Ec -1 eV. In ELOG samples the 0.15 eV electron traps were not detected. Instead only the 0.2 and 1 eV traps were introduced by irradiation. The carrier removal rate in the ELOG n-GaN was found to be measurably lower than for MOCVD samples with a similar doping level. The results are compared to previously published data and possible models of compensation are discussed.

Original languageEnglish
Article number123703
JournalJournal of Applied Physics
Volume109
Issue number12
DOIs
Publication statusPublished - 2011 Jun 15
Externally publishedYes

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electron irradiation
traps
metalorganic chemical vapor deposition
electrons
electrical impedance
activation energy
dosage
conductivity
irradiation
defects
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Polyakov, A. Y., Lee, I-H., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Kolin, N. G., ... Pearton, S. J. (2011). 10 MeV electrons irradiation effects in variously doped n-GaN. Journal of Applied Physics, 109(12), [123703]. https://doi.org/10.1063/1.3596819

10 MeV electrons irradiation effects in variously doped n-GaN. / Polyakov, A. Y.; Lee, In-Hwan; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Kolin, N. G.; Korulin, A. V.; Boiko, V. M.; Pearton, S. J.

In: Journal of Applied Physics, Vol. 109, No. 12, 123703, 15.06.2011.

Research output: Contribution to journalArticle

Polyakov, AY, Lee, I-H, Smirnov, NB, Govorkov, AV, Kozhukhova, EA, Kolin, NG, Korulin, AV, Boiko, VM & Pearton, SJ 2011, '10 MeV electrons irradiation effects in variously doped n-GaN', Journal of Applied Physics, vol. 109, no. 12, 123703. https://doi.org/10.1063/1.3596819
Polyakov AY, Lee I-H, Smirnov NB, Govorkov AV, Kozhukhova EA, Kolin NG et al. 10 MeV electrons irradiation effects in variously doped n-GaN. Journal of Applied Physics. 2011 Jun 15;109(12). 123703. https://doi.org/10.1063/1.3596819
Polyakov, A. Y. ; Lee, In-Hwan ; Smirnov, N. B. ; Govorkov, A. V. ; Kozhukhova, E. A. ; Kolin, N. G. ; Korulin, A. V. ; Boiko, V. M. ; Pearton, S. J. / 10 MeV electrons irradiation effects in variously doped n-GaN. In: Journal of Applied Physics. 2011 ; Vol. 109, No. 12.
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