10 MeV proton damage in β-Ga2O3 Schottky rectifiers

Jiancheng Yang, Zhiting Chen, Fan Ren, S. J. Pearton, Gwangseok Yang, Ji Hyun Kim, Jonathan Lee, Elena Flitsiyan, Leonid Chernyak, Akito Kuramata

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The electrical performance of vertical geometry Ga2O3 rectifiers was measured before and after 10 MeV proton irradiation at a fixed fluence of 1014 cm-2, as well as subsequent annealing up to 450 °C. Point defects introduced by the proton damage create trap states that reduce the carrier concentration in the Ga2O3, with a carrier removal rate of 235.7 cm-1 for protons of this energy. The carrier removal rates under these conditions are comparable to GaN-based films and heterostructures. Even annealing at 300 °C produces a recovery of approximately half of the carriers in the Ga2O3, while annealing at 450 °C almost restores the reverse breakdown voltage. The on/off ratio of the rectifiers was severely degraded by proton damage and this was only partially recovered by 450 °C annealing. The minority carrier diffusion length decreased from ∼340 nm in the starting material to ∼315 nm after the proton irradiation. The reverse recovery characteristics showed little change with values in the range 20-30 ns before and after proton irradiation.

Original languageEnglish
Article number011206
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume36
Issue number1
DOIs
Publication statusPublished - 2018 Jan 1

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proton damage
rectifiers
Proton irradiation
proton irradiation
Protons
Annealing
annealing
recovery
Recovery
Point defects
diffusion length
minority carriers
Electric breakdown
electrical faults
point defects
Carrier concentration
Heterojunctions
fluence
traps
protons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

10 MeV proton damage in β-Ga2O3 Schottky rectifiers. / Yang, Jiancheng; Chen, Zhiting; Ren, Fan; Pearton, S. J.; Yang, Gwangseok; Kim, Ji Hyun; Lee, Jonathan; Flitsiyan, Elena; Chernyak, Leonid; Kuramata, Akito.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 36, No. 1, 011206, 01.01.2018.

Research output: Contribution to journalArticle

Yang, J, Chen, Z, Ren, F, Pearton, SJ, Yang, G, Kim, JH, Lee, J, Flitsiyan, E, Chernyak, L & Kuramata, A 2018, '10 MeV proton damage in β-Ga2O3 Schottky rectifiers', Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, vol. 36, no. 1, 011206. https://doi.org/10.1116/1.5013155
Yang, Jiancheng ; Chen, Zhiting ; Ren, Fan ; Pearton, S. J. ; Yang, Gwangseok ; Kim, Ji Hyun ; Lee, Jonathan ; Flitsiyan, Elena ; Chernyak, Leonid ; Kuramata, Akito. / 10 MeV proton damage in β-Ga2O3 Schottky rectifiers. In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 2018 ; Vol. 36, No. 1.
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