10-watt x-band grid oscillator

Jonathan B. Hacker, Michael P. De Lisio, Moonil Kim, Cheh Ming Liu, Shi Jie Li, Scott W. Wedge, David B. Rutledge

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)

Abstract

A 100-transistor MESFET grid oscillator has been fabricated that generates an effective radiated power of 660 W at 9.8 GHz and has a directivity of 18.0 dB. This corresponds to a total radiated power of 10.3 W, or 103 mW per device. This is the largest recorded output power for a grid oscillator. The grid drain-source bias voltage is 7.4 V and the total drain current for the grid is 6.0 A, resulting in an overall dc-to-rf efficiency of 23%. The pattern of the SSB noise-to-carrier ratio was measured and found to be essentially independent of the radiation angle. The average SSB noise level was -87 dBc/Hz at an offset of 150 kHz from the carrier. An average improvement in the SSB noise-to-carrier ratio of 5 dB was measured for a 100-transistor grid compared to a 16-transistor grid.

Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages823-826
Number of pages4
Volume2
ISBN (Print)0780317793
Publication statusPublished - 1994 Jan 1
Externally publishedYes
EventProceedings of the IEEE MTT-S International Microwave Symposium - San Diego, CA, USA
Duration: 1994 May 231994 May 27

Other

OtherProceedings of the IEEE MTT-S International Microwave Symposium
CitySan Diego, CA, USA
Period94/5/2394/5/27

Fingerprint

Transistors
grids
oscillators
carrier to noise ratios
transistors
Drain current
Bias voltage
Radiation
directivity
field effect transistors
output
electric potential
radiation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Hacker, J. B., De Lisio, M. P., Kim, M., Liu, C. M., Li, S. J., Wedge, S. W., & Rutledge, D. B. (1994). 10-watt x-band grid oscillator. In IEEE MTT-S International Microwave Symposium Digest (Vol. 2, pp. 823-826). Piscataway, NJ, United States: Publ by IEEE.

10-watt x-band grid oscillator. / Hacker, Jonathan B.; De Lisio, Michael P.; Kim, Moonil; Liu, Cheh Ming; Li, Shi Jie; Wedge, Scott W.; Rutledge, David B.

IEEE MTT-S International Microwave Symposium Digest. Vol. 2 Piscataway, NJ, United States : Publ by IEEE, 1994. p. 823-826.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hacker, JB, De Lisio, MP, Kim, M, Liu, CM, Li, SJ, Wedge, SW & Rutledge, DB 1994, 10-watt x-band grid oscillator. in IEEE MTT-S International Microwave Symposium Digest. vol. 2, Publ by IEEE, Piscataway, NJ, United States, pp. 823-826, Proceedings of the IEEE MTT-S International Microwave Symposium, San Diego, CA, USA, 94/5/23.
Hacker JB, De Lisio MP, Kim M, Liu CM, Li SJ, Wedge SW et al. 10-watt x-band grid oscillator. In IEEE MTT-S International Microwave Symposium Digest. Vol. 2. Piscataway, NJ, United States: Publ by IEEE. 1994. p. 823-826
Hacker, Jonathan B. ; De Lisio, Michael P. ; Kim, Moonil ; Liu, Cheh Ming ; Li, Shi Jie ; Wedge, Scott W. ; Rutledge, David B. / 10-watt x-band grid oscillator. IEEE MTT-S International Microwave Symposium Digest. Vol. 2 Piscataway, NJ, United States : Publ by IEEE, 1994. pp. 823-826
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