110 Attojoule-per-bit Efficient Graphene-based Plasmon Modulator on Silicon

Rubab Amin, Sikandar Khan, Cheol Jin Lee, Hamed Dalir, Volker J. Sorger

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.

Original languageEnglish
Title of host publication2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781943580422
Publication statusPublished - 2018 Aug 6
Event2018 Conference on Lasers and Electro-Optics, CLEO 2018 - San Jose, United States
Duration: 2018 May 132018 May 18

Other

Other2018 Conference on Lasers and Electro-Optics, CLEO 2018
CountryUnited States
CitySan Jose
Period18/5/1318/5/18

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ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Amin, R., Khan, S., Lee, C. J., Dalir, H., & Sorger, V. J. (2018). 110 Attojoule-per-bit Efficient Graphene-based Plasmon Modulator on Silicon. In 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings [8427581] Institute of Electrical and Electronics Engineers Inc..