Abstract
We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.
| Original language | English |
|---|---|
| Title of host publication | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 |
| Publisher | OSA - The Optical Society |
| Volume | Part F101-IPRSN 2018 |
| ISBN (Electronic) | 9781557528209 |
| DOIs | |
| Publication status | Published - 2018 Jan 1 |
| Event | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland Duration: 2018 Jul 2 → 2018 Jul 5 |
Other
| Other | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 |
|---|---|
| Country | Switzerland |
| City | Zurich |
| Period | 18/7/2 → 18/7/5 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanics of Materials
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Amin, R., Khan, S., Lee, C. J., Dalir, H., & Sorger, V. J. (2018). 110 attojoule-per-bit Graphene plasmon modulator on Silicon. In Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 (Vol. Part F101-IPRSN 2018). OSA - The Optical Society. https://doi.org/10.1364/IPRSN.2018.IW3B.2