110 attojoule-per-bit Graphene plasmon modulator on Silicon

Rubab Amin, Sikandar Khan, Cheol J. Lee, Hamed Dalir, Volker J. Sorger

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.

Original languageEnglish
Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
PublisherOSA - The Optical Society
ISBN (Electronic)9781557528209
DOIs
Publication statusPublished - 2018
EventIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland
Duration: 2018 Jul 22018 Jul 5

Publication series

NameOptics InfoBase Conference Papers
VolumePart F101-IPRSN 2018

Other

OtherIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Country/TerritorySwitzerland
CityZurich
Period18/7/218/7/5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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