110 attojoule-per-bit Graphene plasmon modulator on Silicon

Rubab Amin, Sikandar Khan, Cheol Jin Lee, Hamed Dalir, Volker J. Sorger

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.

Original languageEnglish
Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
PublisherOSA - The Optical Society
VolumePart F101-IPRSN 2018
ISBN (Electronic)9781557528209
DOIs
Publication statusPublished - 2018 Jan 1
EventIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland
Duration: 2018 Jul 22018 Jul 5

Other

OtherIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
CountrySwitzerland
CityZurich
Period18/7/218/7/5

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

Cite this

Amin, R., Khan, S., Lee, C. J., Dalir, H., & Sorger, V. J. (2018). 110 attojoule-per-bit Graphene plasmon modulator on Silicon. In Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 (Vol. Part F101-IPRSN 2018). OSA - The Optical Society. https://doi.org/10.1364/IPRSN.2018.IW3B.2