Abstract
We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.
| Original language | English |
|---|---|
| Title of host publication | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 |
| Publisher | OSA - The Optical Society |
| Volume | Part F101-IPRSN 2018 |
| ISBN (Electronic) | 9781557528209 |
| DOIs | |
| Publication status | Published - 2018 Jan 1 |
| Event | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland Duration: 2018 Jul 2 → 2018 Jul 5 |
Other
| Other | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 |
|---|---|
| Country | Switzerland |
| City | Zurich |
| Period | 18/7/2 → 18/7/5 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanics of Materials
Cite this
110 attojoule-per-bit Graphene plasmon modulator on Silicon. / Amin, Rubab; Khan, Sikandar; Lee, Cheol Jin; Dalir, Hamed; Sorger, Volker J.
Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. Vol. Part F101-IPRSN 2018 OSA - The Optical Society, 2018.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - 110 attojoule-per-bit Graphene plasmon modulator on Silicon
AU - Amin, Rubab
AU - Khan, Sikandar
AU - Lee, Cheol Jin
AU - Dalir, Hamed
AU - Sorger, Volker J.
PY - 2018/1/1
Y1 - 2018/1/1
N2 - We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.
AB - We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.
UR - http://www.scopus.com/inward/record.url?scp=85051270112&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85051270112&partnerID=8YFLogxK
U2 - 10.1364/IPRSN.2018.IW3B.2
DO - 10.1364/IPRSN.2018.IW3B.2
M3 - Conference contribution
AN - SCOPUS:85051270112
VL - Part F101-IPRSN 2018
BT - Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
PB - OSA - The Optical Society
ER -