110 attojoule-per-bit Graphene plasmon modulator on Silicon

Rubab Amin; Sikandar Khan; Cheol Jin Lee; Hamed Dalir; Volker J. Sorger

doi:10.1364/IPRSN.2018.IW3B.2

110 attojoule-per-bit Graphene plasmon modulator on Silicon

Rubab Amin, Sikandar Khan, Cheol Jin Lee, Hamed Dalir, Volker J. Sorger

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.

Original language	English
Title of host publication	Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Publisher	OSA - The Optical Society
Volume	Part F101-IPRSN 2018
ISBN (Electronic)	9781557528209
DOIs	https://doi.org/10.1364/IPRSN.2018.IW3B.2
Publication status	Published - 2018 Jan 1
Event	Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland Duration: 2018 Jul 2 → 2018 Jul 5

Other

Other	Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Country/Territory	Switzerland
City	Zurich
Period	18/7/2 → 18/7/5

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

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10.1364/IPRSN.2018.IW3B.2

Cite this

Amin, R, Khan, S, Lee, CJ, Dalir, H & Sorger, VJ 2018, 110 attojoule-per-bit Graphene plasmon modulator on Silicon. in Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. vol. Part F101-IPRSN 2018, OSA - The Optical Society, Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018, Zurich, Switzerland, 18/7/2. https://doi.org/10.1364/IPRSN.2018.IW3B.2

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title = "110 attojoule-per-bit Graphene plasmon modulator on Silicon",

abstract = "We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.",

author = "Rubab Amin and Sikandar Khan and Lee, {Cheol Jin} and Hamed Dalir and Sorger, {Volker J.}",

year = "2018",

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doi = "10.1364/IPRSN.2018.IW3B.2",

language = "English",

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AU - Amin, Rubab

AU - Khan, Sikandar

AU - Lee, Cheol Jin

AU - Dalir, Hamed

AU - Sorger, Volker J.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.

AB - We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.

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AN - SCOPUS:85051270112

VL - Part F101-IPRSN 2018

BT - Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018

PB - OSA - The Optical Society

T2 - Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018

Y2 - 2 July 2018 through 5 July 2018

ER -

110 attojoule-per-bit Graphene plasmon modulator on Silicon

Abstract

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