1.2-μM non-epi CMOS smart power IC with four H-bridge motor drivers for portable applications

Boeun Kim, Cheolwoo Kim, Sangchan Han, Soowon Kim, Hoonsoo Park, Hunsub Park

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

A smart power IC is designed with lateral DMOSFETs and fabricated in 1.2-μm non-epi CMOS process. Since digitally controlled PWM scheme is utilized with a high-speed clock frequency, the designed smart IC is suitable for high-speed CD-ROM applications which require fast tracking and high-precision motor control. The smart power IC also combines a step-down DC-to-DC converter and a linear regulator which has a zero fold-back current capability. A self-isolated lateral DMOSFET cell with minimum process change is realized with a pitch size of 16 μm which results to an extremely low specific on-resistance of 0.39 mΩ-cm2. The active die area occupies 19.1 mm2.

Original languageEnglish
Pages (from-to)633-636
Number of pages4
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume1
Publication statusPublished - 1996
EventProceedings of the 1996 IEEE International Symposium on Circuits and Systems, ISCAS. Part 1 (of 4) - Atlanta, GA, USA
Duration: 1996 May 121996 May 15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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