Abstract
A study was performed on the 160-A bulk gallium nitride (GaN) Schottky diode array. The rectifiers fabricated on the freestanding GaN showed a strong dependence of reverse breakdown on contact diameter. It was found that a high total forward output current and a low forward turn-on voltage were obtained by interconnecting the output of many smaller rectifiers.
| Original language | English |
|---|---|
| Pages (from-to) | 3192-3194 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2003 Oct 13 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
160-A bulk GaN Schottky diode array. / Baik, K. H.; Irokawa, Y.; Kim, Ji Hyun; LaRoche, J. R.; Ren, F.; Park, S. S.; Park, Y. J.; Pearton, S. J.
In: Applied Physics Letters, Vol. 83, No. 15, 13.10.2003, p. 3192-3194.Research output: Contribution to journal › Article
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TY - JOUR
T1 - 160-A bulk GaN Schottky diode array
AU - Baik, K. H.
AU - Irokawa, Y.
AU - Kim, Ji Hyun
AU - LaRoche, J. R.
AU - Ren, F.
AU - Park, S. S.
AU - Park, Y. J.
AU - Pearton, S. J.
PY - 2003/10/13
Y1 - 2003/10/13
N2 - A study was performed on the 160-A bulk gallium nitride (GaN) Schottky diode array. The rectifiers fabricated on the freestanding GaN showed a strong dependence of reverse breakdown on contact diameter. It was found that a high total forward output current and a low forward turn-on voltage were obtained by interconnecting the output of many smaller rectifiers.
AB - A study was performed on the 160-A bulk gallium nitride (GaN) Schottky diode array. The rectifiers fabricated on the freestanding GaN showed a strong dependence of reverse breakdown on contact diameter. It was found that a high total forward output current and a low forward turn-on voltage were obtained by interconnecting the output of many smaller rectifiers.
UR - http://www.scopus.com/inward/record.url?scp=0242348680&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0242348680&partnerID=8YFLogxK
U2 - 10.1063/1.1618022
DO - 10.1063/1.1618022
M3 - Article
AN - SCOPUS:0242348680
VL - 83
SP - 3192
EP - 3194
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
ER -