Abstract
A study was performed on the 160-A bulk gallium nitride (GaN) Schottky diode array. The rectifiers fabricated on the freestanding GaN showed a strong dependence of reverse breakdown on contact diameter. It was found that a high total forward output current and a low forward turn-on voltage were obtained by interconnecting the output of many smaller rectifiers.
Original language | English |
---|---|
Pages (from-to) | 3192-3194 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2003 Oct 13 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)