A study was performed on the 160-A bulk gallium nitride (GaN) Schottky diode array. The rectifiers fabricated on the freestanding GaN showed a strong dependence of reverse breakdown on contact diameter. It was found that a high total forward output current and a low forward turn-on voltage were obtained by interconnecting the output of many smaller rectifiers.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)