160-A bulk GaN Schottky diode array

K. H. Baik; Y. Irokawa; Ji Hyun Kim; J. R. LaRoche; F. Ren; S. S. Park; Y. J. Park; S. J. Pearton

doi:10.1063/1.1618022

160-A bulk GaN Schottky diode array

K. H. Baik, Y. Irokawa, Ji Hyun Kim, J. R. LaRoche, F. Ren, S. S. Park, Y. J. Park, S. J. Pearton

Research output: Contribution to journal › Article

11 Citations (Scopus)

Abstract

A study was performed on the 160-A bulk gallium nitride (GaN) Schottky diode array. The rectifiers fabricated on the freestanding GaN showed a strong dependence of reverse breakdown on contact diameter. It was found that a high total forward output current and a low forward turn-on voltage were obtained by interconnecting the output of many smaller rectifiers.

Original language	English
Pages (from-to)	3192-3194
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	15
DOIs	https://doi.org/10.1063/1.1618022
Publication status	Published - 2003 Oct 13
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1618022

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Baik, K. H., Irokawa, Y., Kim, J. H., LaRoche, J. R., Ren, F., Park, S. S., Park, Y. J., & Pearton, S. J. (2003). 160-A bulk GaN Schottky diode array. Applied Physics Letters, 83(15), 3192-3194. https://doi.org/10.1063/1.1618022

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AU - Irokawa, Y.

AU - Kim, Ji Hyun

AU - LaRoche, J. R.

AU - Ren, F.

AU - Park, S. S.

AU - Park, Y. J.

AU - Pearton, S. J.

PY - 2003/10/13

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