17.6 Conversion efficiency multicrystalline silicon solar cells using the reactive ion etching with the damage removal etching

Ji Myung Shim, Hyun Woo Lee, Kyeong Yeon Cho, Jae Keun Seo, Ji Soo Kim, Eun Joo Lee, Jun Young Choi, Dong Joon Oh, Jeong Eun Shin, Ji Sun Kim, Ji Hyun Kong, Soo Hong Lee, Haeseok Lee

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-textured surfaces have the proper damage removal etching (DRE), they have a drop in V ocand FF. RIE texturing with a proper DRE had sufficiently higher short circuit current (I sc) than acidic-textured samples without a drop in open circuit voltage (V oc). And in order to improve efficiency of mc-Si solar cell, we applied RIE texturing with optimized DRE condition to selective emitter structure. In comparison with the acidic-textured solar cells, RIE-textured solar cells have above 200mA absolute gain in Isc. And optimized RIE samples with a DRE by HNO 3/HF mixture showed 17.6% conversion efficiency, which were made using an industrial screen printing process with selective emitter structure.

Original languageEnglish
Article number248182
JournalInternational Journal of Photoenergy
Volume2012
DOIs
Publication statusPublished - 2012 Apr 19
Externally publishedYes

Fingerprint

Silicon solar cells
Reactive ion etching
Conversion efficiency
Etching
solar cells
etching
damage
Texturing
ions
Solar cells
Plasmas
Screen printing
Open circuit voltage
emitters
Silicon wafers
Short circuit currents
reflectance
short circuit currents
open circuit voltage
printing

ASJC Scopus subject areas

  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

17.6 Conversion efficiency multicrystalline silicon solar cells using the reactive ion etching with the damage removal etching. / Shim, Ji Myung; Lee, Hyun Woo; Cho, Kyeong Yeon; Seo, Jae Keun; Kim, Ji Soo; Lee, Eun Joo; Choi, Jun Young; Oh, Dong Joon; Shin, Jeong Eun; Kim, Ji Sun; Kong, Ji Hyun; Lee, Soo Hong; Lee, Haeseok.

In: International Journal of Photoenergy, Vol. 2012, 248182, 19.04.2012.

Research output: Contribution to journalArticle

Shim, JM, Lee, HW, Cho, KY, Seo, JK, Kim, JS, Lee, EJ, Choi, JY, Oh, DJ, Shin, JE, Kim, JS, Kong, JH, Lee, SH & Lee, H 2012, '17.6 Conversion efficiency multicrystalline silicon solar cells using the reactive ion etching with the damage removal etching', International Journal of Photoenergy, vol. 2012, 248182. https://doi.org/10.1155/2012/248182
Shim, Ji Myung ; Lee, Hyun Woo ; Cho, Kyeong Yeon ; Seo, Jae Keun ; Kim, Ji Soo ; Lee, Eun Joo ; Choi, Jun Young ; Oh, Dong Joon ; Shin, Jeong Eun ; Kim, Ji Sun ; Kong, Ji Hyun ; Lee, Soo Hong ; Lee, Haeseok. / 17.6 Conversion efficiency multicrystalline silicon solar cells using the reactive ion etching with the damage removal etching. In: International Journal of Photoenergy. 2012 ; Vol. 2012.
@article{9df9aa23ec0246c792a5d72c8f6ab9b7,
title = "17.6 Conversion efficiency multicrystalline silicon solar cells using the reactive ion etching with the damage removal etching",
abstract = "For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-textured surfaces have the proper damage removal etching (DRE), they have a drop in V ocand FF. RIE texturing with a proper DRE had sufficiently higher short circuit current (I sc) than acidic-textured samples without a drop in open circuit voltage (V oc). And in order to improve efficiency of mc-Si solar cell, we applied RIE texturing with optimized DRE condition to selective emitter structure. In comparison with the acidic-textured solar cells, RIE-textured solar cells have above 200mA absolute gain in Isc. And optimized RIE samples with a DRE by HNO 3/HF mixture showed 17.6{\%} conversion efficiency, which were made using an industrial screen printing process with selective emitter structure.",
author = "Shim, {Ji Myung} and Lee, {Hyun Woo} and Cho, {Kyeong Yeon} and Seo, {Jae Keun} and Kim, {Ji Soo} and Lee, {Eun Joo} and Choi, {Jun Young} and Oh, {Dong Joon} and Shin, {Jeong Eun} and Kim, {Ji Sun} and Kong, {Ji Hyun} and Lee, {Soo Hong} and Haeseok Lee",
year = "2012",
month = "4",
day = "19",
doi = "10.1155/2012/248182",
language = "English",
volume = "2012",
journal = "International Journal of Photoenergy",
issn = "1110-662X",
publisher = "Hindawi Publishing Corporation",

}

TY - JOUR

T1 - 17.6 Conversion efficiency multicrystalline silicon solar cells using the reactive ion etching with the damage removal etching

AU - Shim, Ji Myung

AU - Lee, Hyun Woo

AU - Cho, Kyeong Yeon

AU - Seo, Jae Keun

AU - Kim, Ji Soo

AU - Lee, Eun Joo

AU - Choi, Jun Young

AU - Oh, Dong Joon

AU - Shin, Jeong Eun

AU - Kim, Ji Sun

AU - Kong, Ji Hyun

AU - Lee, Soo Hong

AU - Lee, Haeseok

PY - 2012/4/19

Y1 - 2012/4/19

N2 - For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-textured surfaces have the proper damage removal etching (DRE), they have a drop in V ocand FF. RIE texturing with a proper DRE had sufficiently higher short circuit current (I sc) than acidic-textured samples without a drop in open circuit voltage (V oc). And in order to improve efficiency of mc-Si solar cell, we applied RIE texturing with optimized DRE condition to selective emitter structure. In comparison with the acidic-textured solar cells, RIE-textured solar cells have above 200mA absolute gain in Isc. And optimized RIE samples with a DRE by HNO 3/HF mixture showed 17.6% conversion efficiency, which were made using an industrial screen printing process with selective emitter structure.

AB - For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-textured surfaces have the proper damage removal etching (DRE), they have a drop in V ocand FF. RIE texturing with a proper DRE had sufficiently higher short circuit current (I sc) than acidic-textured samples without a drop in open circuit voltage (V oc). And in order to improve efficiency of mc-Si solar cell, we applied RIE texturing with optimized DRE condition to selective emitter structure. In comparison with the acidic-textured solar cells, RIE-textured solar cells have above 200mA absolute gain in Isc. And optimized RIE samples with a DRE by HNO 3/HF mixture showed 17.6% conversion efficiency, which were made using an industrial screen printing process with selective emitter structure.

UR - http://www.scopus.com/inward/record.url?scp=84859776688&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84859776688&partnerID=8YFLogxK

U2 - 10.1155/2012/248182

DO - 10.1155/2012/248182

M3 - Article

AN - SCOPUS:84859776688

VL - 2012

JO - International Journal of Photoenergy

JF - International Journal of Photoenergy

SN - 1110-662X

M1 - 248182

ER -