193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors

Xiaotie Wang, Chien Fong Lo, Lu Liu, Camilo V. Cuervo, Ren Fan, Stephen J. Pearton, Brent Gila, Michael R. Johnson, Lin Zhou, David J. Smith, Ji Hyun Kim, Oleg Laboutin, Yu Cao, Jerry W. Johnson

Research output: Contribution to journalArticle

Abstract

AlGaN/GaN HEMTs grown on both-side-polished sapphire substrates were successfully lifted-off with a 193-nm UV excimer laser system. The photon energy of the 193 nm laser is larger than the band gap of AlN and thus it can be used to lift-off AlGaN HEMT structures with AlN or AlGaN interfacial layers grown on sapphire substrates prior to growth of the GaN buffer layers. The lifted-off HEMT chip was warped and showed 25-42 reduction of the saturation drain current. There was no degradation observed either in the forward or reverse gate current-voltage (I-V) characteristics or on the drain punch-through voltage. Based on comparisons of cross-sectional electron micrographs, no additional dislocations were created in the HEMT structures after the laser lift-off process. Reduction in saturation drain current was attributed to relaxation of the lifted-off HEMT structures. Newtons rings and Raman spectrum E2 peak shifts were used to estimate the strain relaxation of the laser lifted-off samples.

Original languageEnglish
Article number051209
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume30
Issue number5
DOIs
Publication statusPublished - 2012 Sep 1

Fingerprint

Excimer lasers
High electron mobility transistors
high electron mobility transistors
excimer lasers
Drain current
Sapphire
Lasers
sapphire
lasers
saturation
Strain relaxation
punches
Electric potential
electric potential
Substrates
Buffer layers
ultraviolet lasers
newton
Raman scattering
Energy gap

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors. / Wang, Xiaotie; Lo, Chien Fong; Liu, Lu; Cuervo, Camilo V.; Fan, Ren; Pearton, Stephen J.; Gila, Brent; Johnson, Michael R.; Zhou, Lin; Smith, David J.; Kim, Ji Hyun; Laboutin, Oleg; Cao, Yu; Johnson, Jerry W.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 30, No. 5, 051209, 01.09.2012.

Research output: Contribution to journalArticle

Wang, X, Lo, CF, Liu, L, Cuervo, CV, Fan, R, Pearton, SJ, Gila, B, Johnson, MR, Zhou, L, Smith, DJ, Kim, JH, Laboutin, O, Cao, Y & Johnson, JW 2012, '193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 30, no. 5, 051209. https://doi.org/10.1116/1.4751278
Wang, Xiaotie ; Lo, Chien Fong ; Liu, Lu ; Cuervo, Camilo V. ; Fan, Ren ; Pearton, Stephen J. ; Gila, Brent ; Johnson, Michael R. ; Zhou, Lin ; Smith, David J. ; Kim, Ji Hyun ; Laboutin, Oleg ; Cao, Yu ; Johnson, Jerry W. / 193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2012 ; Vol. 30, No. 5.
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