2-D localization in single wall carbon nanotube network synthesized by arc-plasma method

G. T. Kim; J. G. Park; Y. W. Park; K. Liu; G. Düsberg; S. Roth

doi:10.1016/S0379-6779(98)00223-9

2-D localization in single wall carbon nanotube network synthesized by arc-plasma method

G. T. Kim, J. G. Park, Y. W. Park, K. Liu, G. Düsberg, S. Roth

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Resistivity ρ(T) and magnetoresistance (MR), ((ρ(H)-ρ(H=0))/ρ(H=0), of the entangled single wall carbon nanotube (SWCN) network are studied. The temperature dependence of the resistivity shows the negative dρ/dT from T=4.2K to 300K, which fits well to the 2-dimensional variable range hopping (VRH) (ρ(T)=ρ₀exp((T₀/T)^1/3)) formula with T₀ = 259.2 K. The overall MR shows a negative H² behavior at low magnetic field. At T≤3.8K and high magnetic field, the negative MR turns to be positive. The positive MR becomes saturating for H>10 Tesla. The negative MR with a positive upturn can be decomposed into a positive contribution from the 2-dimensional spin-dependent VRH and a negative contribution from the 2-dimensional weak localization (WL). Moreover we report the interesting chain-like ring structures found from the by-products of SWCNs synthesized by the arc-plasma method.

Original language	English
Pages (from-to)	2551-2554
Number of pages	4
Journal	Synthetic Metals
Volume	103
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(98)00223-9
Publication status	Published - 1999 Jun 24
Externally published	Yes
Event	Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98) - Montpellier Duration: 1998 Jul 12 → 1998 Jul 18

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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@article{a546ea8c597b492286d45c3e7ce91f0c,

title = "2-D localization in single wall carbon nanotube network synthesized by arc-plasma method",

abstract = "Resistivity ρ(T) and magnetoresistance (MR), ((ρ(H)-ρ(H=0))/ρ(H=0), of the entangled single wall carbon nanotube (SWCN) network are studied. The temperature dependence of the resistivity shows the negative dρ/dT from T=4.2K to 300K, which fits well to the 2-dimensional variable range hopping (VRH) (ρ(T)=ρ0exp((T0/T)1/3)) formula with T0 = 259.2 K. The overall MR shows a negative H2 behavior at low magnetic field. At T≤3.8K and high magnetic field, the negative MR turns to be positive. The positive MR becomes saturating for H>10 Tesla. The negative MR with a positive upturn can be decomposed into a positive contribution from the 2-dimensional spin-dependent VRH and a negative contribution from the 2-dimensional weak localization (WL). Moreover we report the interesting chain-like ring structures found from the by-products of SWCNs synthesized by the arc-plasma method.",

author = "Kim, {G. T.} and Park, {J. G.} and Park, {Y. W.} and K. Liu and G. D{\"u}sberg and S. Roth",

year = "1999",

month = jun,

day = "24",

doi = "10.1016/S0379-6779(98)00223-9",

language = "English",

volume = "103",

pages = "2551--2554",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

number = "1-3",

note = "Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98) ; Conference date: 12-07-1998 Through 18-07-1998",

}

TY - JOUR

T1 - 2-D localization in single wall carbon nanotube network synthesized by arc-plasma method

AU - Kim, G. T.

AU - Park, J. G.

AU - Park, Y. W.

AU - Liu, K.

AU - Düsberg, G.

AU - Roth, S.

PY - 1999/6/24

Y1 - 1999/6/24

N2 - Resistivity ρ(T) and magnetoresistance (MR), ((ρ(H)-ρ(H=0))/ρ(H=0), of the entangled single wall carbon nanotube (SWCN) network are studied. The temperature dependence of the resistivity shows the negative dρ/dT from T=4.2K to 300K, which fits well to the 2-dimensional variable range hopping (VRH) (ρ(T)=ρ0exp((T0/T)1/3)) formula with T0 = 259.2 K. The overall MR shows a negative H2 behavior at low magnetic field. At T≤3.8K and high magnetic field, the negative MR turns to be positive. The positive MR becomes saturating for H>10 Tesla. The negative MR with a positive upturn can be decomposed into a positive contribution from the 2-dimensional spin-dependent VRH and a negative contribution from the 2-dimensional weak localization (WL). Moreover we report the interesting chain-like ring structures found from the by-products of SWCNs synthesized by the arc-plasma method.

AB - Resistivity ρ(T) and magnetoresistance (MR), ((ρ(H)-ρ(H=0))/ρ(H=0), of the entangled single wall carbon nanotube (SWCN) network are studied. The temperature dependence of the resistivity shows the negative dρ/dT from T=4.2K to 300K, which fits well to the 2-dimensional variable range hopping (VRH) (ρ(T)=ρ0exp((T0/T)1/3)) formula with T0 = 259.2 K. The overall MR shows a negative H2 behavior at low magnetic field. At T≤3.8K and high magnetic field, the negative MR turns to be positive. The positive MR becomes saturating for H>10 Tesla. The negative MR with a positive upturn can be decomposed into a positive contribution from the 2-dimensional spin-dependent VRH and a negative contribution from the 2-dimensional weak localization (WL). Moreover we report the interesting chain-like ring structures found from the by-products of SWCNs synthesized by the arc-plasma method.

UR - http://www.scopus.com/inward/record.url?scp=0033138004&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033138004&partnerID=8YFLogxK

U2 - 10.1016/S0379-6779(98)00223-9

DO - 10.1016/S0379-6779(98)00223-9

M3 - Conference article

AN - SCOPUS:0033138004

VL - 103

SP - 2551

EP - 2554

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1-3

T2 - Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98)

Y2 - 12 July 1998 through 18 July 1998

ER -