20-Gb/s ON-OFF-Keying Modulators Using 0.25-um InP DHBT Switches at 290 GHz

C. Yi; S. H. Choi; M. Urteaga; M. Kim

doi:10.1109/LMWC.2019.2908878

20-Gb/s ON-OFF-Keying Modulators Using 0.25-um InP DHBT Switches at 290 GHz

C. Yi, S. H. Choi, M. Urteaga, M. Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Performances of high-speed switches operating as terahertz on-off-keying (OOK) modulators are reported. Two types of switches, a passive shunt switch and an amplifier switch, are fabricated using 0.25- \mu \text{m} InP double heterojuction bipolar transistor (DHBT) technology. Small-signal tests show that the amplifier switch possesses superior on-off ratio, but the passive switch has broader bandwidth and smaller group delay ripples. A modulator test setup is built with 20-dB path loss between the transmitter and the receiver. The results indicate that carrier power levels of 14 dBm for the shunt switch and 8 dBm for the amplifier switch are required for 20-Gb/s OOK modulation with bit error rate (BER) of 10^-2 at 290 GHz.

Original language	English
Article number	8691541
Pages (from-to)	360-362
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	29
Issue number	5
DOIs	https://doi.org/10.1109/LMWC.2019.2908878
Publication status	Published - 2019 May

Keywords

InP double heterojuction bipolar transistor (DHBT)
terahertz on-off -keying (OOK) modulator
terahertz switch

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2019.2908878

Cite this

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title = "20-Gb/s ON-OFF-Keying Modulators Using 0.25-um InP DHBT Switches at 290 GHz",

abstract = "Performances of high-speed switches operating as terahertz on-off-keying (OOK) modulators are reported. Two types of switches, a passive shunt switch and an amplifier switch, are fabricated using 0.25- \mu \text{m} InP double heterojuction bipolar transistor (DHBT) technology. Small-signal tests show that the amplifier switch possesses superior on-off ratio, but the passive switch has broader bandwidth and smaller group delay ripples. A modulator test setup is built with 20-dB path loss between the transmitter and the receiver. The results indicate that carrier power levels of 14 dBm for the shunt switch and 8 dBm for the amplifier switch are required for 20-Gb/s OOK modulation with bit error rate (BER) of 10-2 at 290 GHz.",

keywords = "InP double heterojuction bipolar transistor (DHBT), terahertz on-off -keying (OOK) modulator, terahertz switch",

author = "C. Yi and Choi, {S. H.} and M. Urteaga and M. Kim",

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AU - Kim, M.

PY - 2019/5

Y1 - 2019/5

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AB - Performances of high-speed switches operating as terahertz on-off-keying (OOK) modulators are reported. Two types of switches, a passive shunt switch and an amplifier switch, are fabricated using 0.25- \mu \text{m} InP double heterojuction bipolar transistor (DHBT) technology. Small-signal tests show that the amplifier switch possesses superior on-off ratio, but the passive switch has broader bandwidth and smaller group delay ripples. A modulator test setup is built with 20-dB path loss between the transmitter and the receiver. The results indicate that carrier power levels of 14 dBm for the shunt switch and 8 dBm for the amplifier switch are required for 20-Gb/s OOK modulation with bit error rate (BER) of 10-2 at 290 GHz.

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20-Gb/s ON-OFF-Keying Modulators Using 0.25-um InP DHBT Switches at 290 GHz

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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