20-Gb/s ON-OFF-Keying Modulators Using 0.25-um InP DHBT Switches at 290 GHz

C. Yi, S. H. Choi, M. Urteaga, Moonil Kim

Research output: Contribution to journalArticle

Abstract

Performances of high-speed switches operating as terahertz on-off-keying (OOK) modulators are reported. Two types of switches, a passive shunt switch and an amplifier switch, are fabricated using 0.25- \mu \text{m} InP double heterojuction bipolar transistor (DHBT) technology. Small-signal tests show that the amplifier switch possesses superior on-off ratio, but the passive switch has broader bandwidth and smaller group delay ripples. A modulator test setup is built with 20-dB path loss between the transmitter and the receiver. The results indicate that carrier power levels of 14 dBm for the shunt switch and 8 dBm for the amplifier switch are required for 20-Gb/s OOK modulation with bit error rate (BER) of 10 -2 at 290 GHz.

Original languageEnglish
Article number8691541
Pages (from-to)360-362
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume29
Issue number5
DOIs
Publication statusPublished - 2019 May 1

Fingerprint

keying
Bipolar transistors
bipolar transistors
Modulators
modulators
switches
Switches
amplifiers
shunts
Group delay
transmitter receivers
bit error rate
ripples
Bit error rate
Transmitters
receivers
high speed
Modulation
bandwidth
Bandwidth

Keywords

  • InP double heterojuction bipolar transistor (DHBT)
  • terahertz on-off -keying (OOK) modulator
  • terahertz switch

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

20-Gb/s ON-OFF-Keying Modulators Using 0.25-um InP DHBT Switches at 290 GHz. / Yi, C.; Choi, S. H.; Urteaga, M.; Kim, Moonil.

In: IEEE Microwave and Wireless Components Letters, Vol. 29, No. 5, 8691541, 01.05.2019, p. 360-362.

Research output: Contribution to journalArticle

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