2.6 A, 0.69 MW cm-2 single-chip bulk GaN p-i-n rectifier

Y. Irokawa, B. Luo, B. S. Kang, Jihyun Kim, J. R. LaRoche, F. Ren, K. H. Baik, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, S. S. Park, Y. J. Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The performance of a 9 device array of 500 × 500 μm2 GaN p-i-n rectifiers fabricated on epitaxial layers grown on a free-standing GaN template is reported. The forward turn-on voltage was ∼ 5.5 V at 25 °C, with an on-state resistance of ∼ 5 × 10-3 Ωcm2. The total forward current was 1 A at ∼ 8.8 V and 2.6 A at 18 V. The power figure-of-merit for the array, VB 2/RON, was 0.69 MWcm-2, with a reverse recovery time of ≤300 ns. The individual p-i-n rectifiers were interconnected using electroplated Au and clamped in a Cu pressure pack for thermal management.

Original languageEnglish
Pages (from-to)359-361
Number of pages3
JournalSolid-State Electronics
Volume48
Issue number2
DOIs
Publication statusPublished - 2004 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Irokawa, Y., Luo, B., Kang, B. S., Kim, J., LaRoche, J. R., Ren, F., Baik, K. H., Pearton, S. J., Pan, C. C., Chen, G. T., Chyi, J. I., Park, S. S., & Park, Y. J. (2004). 2.6 A, 0.69 MW cm-2 single-chip bulk GaN p-i-n rectifier. Solid-State Electronics, 48(2), 359-361. https://doi.org/10.1016/S0038-1101(03)00323-X