2.6 A, 0.69 MW cm-2 single-chip bulk GaN p-i-n rectifier

Y. Irokawa; B. Luo; B. S. Kang; Jihyun Kim; J. R. LaRoche; F. Ren; K. H. Baik; S. J. Pearton; C. C. Pan; G. T. Chen; J. I. Chyi; S. S. Park; Y. J. Park

doi:10.1016/S0038-1101(03)00323-X

2.6 A, 0.69 MW cm^-2 single-chip bulk GaN p-i-n rectifier

Y. Irokawa, B. Luo, B. S. Kang, Jihyun Kim, J. R. LaRoche, F. Ren, K. H. Baik, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, S. S. Park, Y. J. Park

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The performance of a 9 device array of 500 × 500 μm² GaN p-i-n rectifiers fabricated on epitaxial layers grown on a free-standing GaN template is reported. The forward turn-on voltage was ∼ 5.5 V at 25 °C, with an on-state resistance of ∼ 5 × 10^-3 Ωcm². The total forward current was 1 A at ∼ 8.8 V and 2.6 A at 18 V. The power figure-of-merit for the array, V_B ²/R_ON, was 0.69 MWcm^-2, with a reverse recovery time of ≤300 ns. The individual p-i-n rectifiers were interconnected using electroplated Au and clamped in a Cu pressure pack for thermal management.

Original language	English
Pages (from-to)	359-361
Number of pages	3
Journal	Solid-State Electronics
Volume	48
Issue number	2
DOIs	https://doi.org/10.1016/S0038-1101(03)00323-X
Publication status	Published - 2004 Feb
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(03)00323-X

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@article{a95be6fb6e69413cb092043afd3f1e82,

title = "2.6 A, 0.69 MW cm-2 single-chip bulk GaN p-i-n rectifier",

abstract = "The performance of a 9 device array of 500 × 500 μm2 GaN p-i-n rectifiers fabricated on epitaxial layers grown on a free-standing GaN template is reported. The forward turn-on voltage was ∼ 5.5 V at 25 °C, with an on-state resistance of ∼ 5 × 10-3 Ωcm2. The total forward current was 1 A at ∼ 8.8 V and 2.6 A at 18 V. The power figure-of-merit for the array, VB 2/RON, was 0.69 MWcm-2, with a reverse recovery time of ≤300 ns. The individual p-i-n rectifiers were interconnected using electroplated Au and clamped in a Cu pressure pack for thermal management.",

author = "Y. Irokawa and B. Luo and Kang, {B. S.} and Jihyun Kim and LaRoche, {J. R.} and F. Ren and Baik, {K. H.} and Pearton, {S. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.} and Park, {S. S.} and Park, {Y. J.}",

note = "Funding Information: The work at UF is partially supported by EPRI and NSF(CTS-0301178) monitored by Dr. M. Burka. The work at NCU is partially supported by the Ministry of Education of ROC under the Program for Promoting Academic Excellence of Universities (890E-FA06-1-4) and the National Science Council of ROC (NSC89-2215-E-008-031).",

year = "2004",

month = feb,

doi = "10.1016/S0038-1101(03)00323-X",

language = "English",

volume = "48",

pages = "359--361",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "2",

}

TY - JOUR

T1 - 2.6 A, 0.69 MW cm-2 single-chip bulk GaN p-i-n rectifier

AU - Irokawa, Y.

AU - Luo, B.

AU - Kang, B. S.

AU - Kim, Jihyun

AU - LaRoche, J. R.

AU - Ren, F.

AU - Baik, K. H.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Park, S. S.

AU - Park, Y. J.

N1 - Funding Information: The work at UF is partially supported by EPRI and NSF(CTS-0301178) monitored by Dr. M. Burka. The work at NCU is partially supported by the Ministry of Education of ROC under the Program for Promoting Academic Excellence of Universities (890E-FA06-1-4) and the National Science Council of ROC (NSC89-2215-E-008-031).

PY - 2004/2

Y1 - 2004/2

N2 - The performance of a 9 device array of 500 × 500 μm2 GaN p-i-n rectifiers fabricated on epitaxial layers grown on a free-standing GaN template is reported. The forward turn-on voltage was ∼ 5.5 V at 25 °C, with an on-state resistance of ∼ 5 × 10-3 Ωcm2. The total forward current was 1 A at ∼ 8.8 V and 2.6 A at 18 V. The power figure-of-merit for the array, VB 2/RON, was 0.69 MWcm-2, with a reverse recovery time of ≤300 ns. The individual p-i-n rectifiers were interconnected using electroplated Au and clamped in a Cu pressure pack for thermal management.

AB - The performance of a 9 device array of 500 × 500 μm2 GaN p-i-n rectifiers fabricated on epitaxial layers grown on a free-standing GaN template is reported. The forward turn-on voltage was ∼ 5.5 V at 25 °C, with an on-state resistance of ∼ 5 × 10-3 Ωcm2. The total forward current was 1 A at ∼ 8.8 V and 2.6 A at 18 V. The power figure-of-merit for the array, VB 2/RON, was 0.69 MWcm-2, with a reverse recovery time of ≤300 ns. The individual p-i-n rectifiers were interconnected using electroplated Au and clamped in a Cu pressure pack for thermal management.

UR - http://www.scopus.com/inward/record.url?scp=0242366635&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(03)00323-X

DO - 10.1016/S0038-1101(03)00323-X

M3 - Article

AN - SCOPUS:0242366635

VL - 48

SP - 359

EP - 361

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 2

ER -

2.6 A, 0.69 MW cm^-2 single-chip bulk GaN p-i-n rectifier

Abstract

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