Abstract
The performance of a 9 device array of 500 × 500 μm2 GaN p-i-n rectifiers fabricated on epitaxial layers grown on a free-standing GaN template is reported. The forward turn-on voltage was ∼ 5.5 V at 25 °C, with an on-state resistance of ∼ 5 × 10-3 Ωcm2. The total forward current was 1 A at ∼ 8.8 V and 2.6 A at 18 V. The power figure-of-merit for the array, VB 2/RON, was 0.69 MWcm-2, with a reverse recovery time of ≤300 ns. The individual p-i-n rectifiers were interconnected using electroplated Au and clamped in a Cu pressure pack for thermal management.
| Original language | English |
|---|---|
| Pages (from-to) | 359-361 |
| Number of pages | 3 |
| Journal | Solid-State Electronics |
| Volume | 48 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2004 Feb |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Irokawa, Y., Luo, B., Kang, B. S., Kim, J., LaRoche, J. R., Ren, F., Baik, K. H., Pearton, S. J., Pan, C. C., Chen, G. T., Chyi, J. I., Park, S. S., & Park, Y. J. (2004). 2.6 A, 0.69 MW cm-2 single-chip bulk GaN p-i-n rectifier. Solid-State Electronics, 48(2), 359-361. https://doi.org/10.1016/S0038-1101(03)00323-X