280-GHz Rectangular Cavity Antenna Integrated in an 80-μm InP Substrate

S. H. Choi, I. J. Lee, Sanggeun Jeon, Moonil Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An integrated-circuit antenna in the form of a rectangular cavity is fabricated inside an 80-μm-thick InP substrate for terahertz applications. The metal-via fence surrounding the cavity prevents any substrate modes. The cavity size is optimized for the operation bandwidth of the fundamental resonant mode near 280 GHz. The antenna measurements performed using a miniature setup constructed inside a probe station show 6-dB matching bandwidth of 20 GHz with the peak efficiency of 52% at 275 GHz. The radiation patterns indicate a broadside main beam that matches the simulation and confirms the elimination of substrate modes.

Original languageEnglish
Pages (from-to)837-839
Number of pages3
JournalIEEE Antennas and Wireless Propagation Letters
Volume16
DOIs
Publication statusPublished - 2017

Fingerprint

Antennas
Substrates
Bandwidth
Fences
Integrated circuits
Metals

Keywords

  • InP-filled cavity antenna
  • integrated antenna
  • terahertz antenna

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

280-GHz Rectangular Cavity Antenna Integrated in an 80-μm InP Substrate. / Choi, S. H.; Lee, I. J.; Jeon, Sanggeun; Kim, Moonil.

In: IEEE Antennas and Wireless Propagation Letters, Vol. 16, 2017, p. 837-839.

Research output: Contribution to journalArticle

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