3 MeV electron irradiation-induced defects in CuInSe2 thin films

Haeseok Lee, Hiroshi Okada, Akihiro Wakahara, Takeshi Ohshima, Hisayoshi Itoh, Shirou Kawakita, Mitsuru Imaizumi, Sumio Matsuda, Akira Yoshida

Research output: Contribution to journalArticle

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Abstract

3MeV electron irradiation induced-defects in CuInSe2 (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1 × 10 17cm-2. The carrier removal rate was estimated to be about 1 cm-1. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained ND = 1.8 × 1017cm-3, NA = 1.7 × 10 16cm-3 and ED = 18meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and NT0 = 1.4 ×10 17cm-3 and ET = 54meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.

Original languageEnglish
Pages (from-to)1887-1890
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume64
Issue number9-10
DOIs
Publication statusPublished - 2003 Sep 1
Externally publishedYes

Fingerprint

Electron irradiation
electron irradiation
Hall mobility
Irradiation
Thin films
Defects
irradiation
Carrier concentration
defects
thin films
temperature dependence
fluence
Electric properties
electrical properties
Impurities
impurities
Temperature
Electrons
electrons

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Lee, H., Okada, H., Wakahara, A., Ohshima, T., Itoh, H., Kawakita, S., ... Yoshida, A. (2003). 3 MeV electron irradiation-induced defects in CuInSe2 thin films. Journal of Physics and Chemistry of Solids, 64(9-10), 1887-1890. https://doi.org/10.1016/S0022-3697(03)00109-4

3 MeV electron irradiation-induced defects in CuInSe2 thin films. / Lee, Haeseok; Okada, Hiroshi; Wakahara, Akihiro; Ohshima, Takeshi; Itoh, Hisayoshi; Kawakita, Shirou; Imaizumi, Mitsuru; Matsuda, Sumio; Yoshida, Akira.

In: Journal of Physics and Chemistry of Solids, Vol. 64, No. 9-10, 01.09.2003, p. 1887-1890.

Research output: Contribution to journalArticle

Lee, H, Okada, H, Wakahara, A, Ohshima, T, Itoh, H, Kawakita, S, Imaizumi, M, Matsuda, S & Yoshida, A 2003, '3 MeV electron irradiation-induced defects in CuInSe2 thin films', Journal of Physics and Chemistry of Solids, vol. 64, no. 9-10, pp. 1887-1890. https://doi.org/10.1016/S0022-3697(03)00109-4
Lee, Haeseok ; Okada, Hiroshi ; Wakahara, Akihiro ; Ohshima, Takeshi ; Itoh, Hisayoshi ; Kawakita, Shirou ; Imaizumi, Mitsuru ; Matsuda, Sumio ; Yoshida, Akira. / 3 MeV electron irradiation-induced defects in CuInSe2 thin films. In: Journal of Physics and Chemistry of Solids. 2003 ; Vol. 64, No. 9-10. pp. 1887-1890.
@article{5c70d8b310904a21b5caa2584a7e49d4,
title = "3 MeV electron irradiation-induced defects in CuInSe2 thin films",
abstract = "3MeV electron irradiation induced-defects in CuInSe2 (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1 × 10 17cm-2. The carrier removal rate was estimated to be about 1 cm-1. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained ND = 1.8 × 1017cm-3, NA = 1.7 × 10 16cm-3 and ED = 18meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and NT0 = 1.4 ×10 17cm-3 and ET = 54meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.",
author = "Haeseok Lee and Hiroshi Okada and Akihiro Wakahara and Takeshi Ohshima and Hisayoshi Itoh and Shirou Kawakita and Mitsuru Imaizumi and Sumio Matsuda and Akira Yoshida",
year = "2003",
month = "9",
day = "1",
doi = "10.1016/S0022-3697(03)00109-4",
language = "English",
volume = "64",
pages = "1887--1890",
journal = "Journal of Physics and Chemistry of Solids",
issn = "0022-3697",
publisher = "Elsevier Limited",
number = "9-10",

}

TY - JOUR

T1 - 3 MeV electron irradiation-induced defects in CuInSe2 thin films

AU - Lee, Haeseok

AU - Okada, Hiroshi

AU - Wakahara, Akihiro

AU - Ohshima, Takeshi

AU - Itoh, Hisayoshi

AU - Kawakita, Shirou

AU - Imaizumi, Mitsuru

AU - Matsuda, Sumio

AU - Yoshida, Akira

PY - 2003/9/1

Y1 - 2003/9/1

N2 - 3MeV electron irradiation induced-defects in CuInSe2 (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1 × 10 17cm-2. The carrier removal rate was estimated to be about 1 cm-1. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained ND = 1.8 × 1017cm-3, NA = 1.7 × 10 16cm-3 and ED = 18meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and NT0 = 1.4 ×10 17cm-3 and ET = 54meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.

AB - 3MeV electron irradiation induced-defects in CuInSe2 (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1 × 10 17cm-2. The carrier removal rate was estimated to be about 1 cm-1. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained ND = 1.8 × 1017cm-3, NA = 1.7 × 10 16cm-3 and ED = 18meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and NT0 = 1.4 ×10 17cm-3 and ET = 54meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.

UR - http://www.scopus.com/inward/record.url?scp=0043239035&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0043239035&partnerID=8YFLogxK

U2 - 10.1016/S0022-3697(03)00109-4

DO - 10.1016/S0022-3697(03)00109-4

M3 - Article

VL - 64

SP - 1887

EP - 1890

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

SN - 0022-3697

IS - 9-10

ER -