3 MeV electron irradiation-induced defects in CuInSe2 thin films

Hae Seok Lee, Hiroshi Okada, Akihiro Wakahara, Takeshi Ohshima, Hisayoshi Itoh, Shirou Kawakita, Mitsuru Imaizumi, Sumio Matsuda, Akira Yoshida

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

3MeV electron irradiation induced-defects in CuInSe2 (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1 × 10 17cm-2. The carrier removal rate was estimated to be about 1 cm-1. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained ND = 1.8 × 1017cm-3, NA = 1.7 × 10 16cm-3 and ED = 18meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and NT0 = 1.4 ×10 17cm-3 and ET = 54meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.

Original languageEnglish
Pages (from-to)1887-1890
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume64
Issue number9-10
DOIs
Publication statusPublished - 2003 Sep 1
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Lee, H. S., Okada, H., Wakahara, A., Ohshima, T., Itoh, H., Kawakita, S., Imaizumi, M., Matsuda, S., & Yoshida, A. (2003). 3 MeV electron irradiation-induced defects in CuInSe2 thin films. Journal of Physics and Chemistry of Solids, 64(9-10), 1887-1890. https://doi.org/10.1016/S0022-3697(03)00109-4