300 GHz InP HBT amplifier with 10 mW output power

H. G. Yu, S. H. Choi, S. Jeon, M. Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A high-power terahertz solid-state amplifier fabricated using 0.25 μ m InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 μ m. A significant amount of power of ~10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.

Original languageEnglish
Pages (from-to)377-379
Number of pages3
JournalElectronics Letters
Volume50
Issue number5
DOIs
Publication statusPublished - 2014 Feb 27

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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