A high-power terahertz solid-state amplifier fabricated using 0.25 μ m InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 μ m. A significant amount of power of ~10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.
|Number of pages||3|
|Publication status||Published - 2014 Feb 27|
ASJC Scopus subject areas
- Electrical and Electronic Engineering