300 GHz six-stage differential-mode amplifier

H. J. Park, J. S. Rieh, M. Kim, J. B. Hacker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

A 300 GHz amplifier is fabricated using indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. T he cascade chain in the amplifier contalns six unit cells each containing a pair of common-base DHBTs in differential configuration. A total of three signal lines run through to the unit-cell to obtain the differential-mode amplifier gain and provide proper dc bias. Measured results show the peak gain of 17.3 dB at 290 GHz with 10-dB gain-bandwidth of 20 GHz.

Original languageEnglish
Title of host publication2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Pages49-52
Number of pages4
DOIs
Publication statusPublished - 2010
Event2010 IEEE MTT-S International Microwave Symposium, MTT 2010 - Anaheim, CA, United States
Duration: 2010 May 232010 May 28

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Other

Other2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Country/TerritoryUnited States
CityAnaheim, CA
Period10/5/2310/5/28

Keywords

  • Indium phosphide (InP)
  • Monolithic millimeter-wave integrated circuit (MMIC)
  • Terahertz amplifier

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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