@inproceedings{f644ff8024534b87a0cf40665a139c94,
title = "35 GHz HBT monolithic grid oscillator",
abstract = "A monolithic grid oscillator has been fabricated that oscillates in Ka-band. The grid consists of 36 heterojunction bipolar transistors (HBT's) at intervals of 1 mm. The grid was built on a 740 μm thick GaAs substrate with gold evaporated on the back side. The oscillation frequency is 34.7 GHz, with an effective radiated power (ERP) of 170 mW at a DC bias power of 370 mW. The is the first report of a successful monolithic grid oscillator.",
author = "M. Kim and Sovero, {E. A.} and Weikle, {R. M.} and Hacker, {J. B.} and DeLisio, {M. P.} and Rutledge, {D. B.}",
year = "1992",
language = "English",
isbn = "0819411639",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Society of Photo-Optical Instrumentation Engineers",
pages = "402--403",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Proceedings of the 17th International Conference on Infrared and Millimeter Waves ; Conference date: 14-12-1992 Through 17-12-1992",
}