35 GHz HBT monolithic grid oscillator

M. Kim, E. A. Sovero, R. M. Weikle, J. B. Hacker, M. P. DeLisio, D. B. Rutledge

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

A monolithic grid oscillator has been fabricated that oscillates in Ka-band. The grid consists of 36 heterojunction bipolar transistors (HBT's) at intervals of 1 mm. The grid was built on a 740 μm thick GaAs substrate with gold evaporated on the back side. The oscillation frequency is 34.7 GHz, with an effective radiated power (ERP) of 170 mW at a DC bias power of 370 mW. The is the first report of a successful monolithic grid oscillator.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages402-403
Number of pages2
ISBN (Print)0819411639
Publication statusPublished - 1992
EventProceedings of the 17th International Conference on Infrared and Millimeter Waves - Pasadena, CA, USA
Duration: 1992 Dec 141992 Dec 17

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1929
ISSN (Print)0277-786X

Other

OtherProceedings of the 17th International Conference on Infrared and Millimeter Waves
CityPasadena, CA, USA
Period92/12/1492/12/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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