366-kS/s 1.09-nJ 0.0013-m mm2 frequency-to-Digital converter based CMOS temperature sensor utilizing multiphase clock

Kisoo Kim, Hokyu Lee, Chulwoo Kim

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A smart temperature sensor in 65-nm CMOS, utilizing CMOS ring oscillators, consumes 1.09 nJ at a conversion rate of 366 kS/s. This is achieved by the direct temperature-to-digital conversion method implemented in the frequency-to-digital converter. The algorithm utilized in the fine code generator makes it possible to increase the resolution of the sensor efficiently. Compared to previous work, this brief shows lower VDD operation. After one point calibration, the chip-to-chip spread is + 2.7̃-2.9 °C over the temperature range of-40 °C to 110 °C.

Original languageEnglish
Article number6338359
Pages (from-to)1950-1954
Number of pages5
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume21
Issue number10
DOIs
Publication statusPublished - 2013 Jan 1

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Temperature sensors
Clocks
Smart sensors
Calibration
Temperature
Sensors

Keywords

  • Compensation
  • frequency-to-digital converter
  • oscillator
  • PVT variation
  • temperature sensor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Software

Cite this

366-kS/s 1.09-nJ 0.0013-m mm2 frequency-to-Digital converter based CMOS temperature sensor utilizing multiphase clock. / Kim, Kisoo; Lee, Hokyu; Kim, Chulwoo.

In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 21, No. 10, 6338359, 01.01.2013, p. 1950-1954.

Research output: Contribution to journalArticle

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