4H-SiC Schottky diode array with 430 A forward current

Ji Hyun Kim, K. H. Baik, B. S. Kang, S. Kim, Y. Irokawa, F. Ren, S. J. Pearton, G. Y. Chung

Research output: Contribution to journalArticle

Abstract

An array (305 devices) of 500 × 500 μm 4H-SiC Schottky rectifiers was interconnected using electroplated Au and clamped in a Cu pressure contact flat package. A peak total forward current of 430 A at 5.7V was achieved, with an on-state resistance (Ron) of 5.8 × 10-3 Ωcm2. The figure-of-merit, VB 2/R on, where VB is the reverse breakdown voltage, was 0.69MW/cm2. Thermal simulations showed that the Cu press-pack was capable of maintaining the temperature of the SiC array at < 315 K under pulsed conditions whereas without this heat-sinking the temperature rise was extremely rapid.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number6
DOIs
Publication statusPublished - 2004 Jun 16
Externally publishedYes

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Schottky diodes
Diodes
thermal simulation
sinking
rectifiers
Electric breakdown
electrical faults
figure of merit
heat
Temperature
temperature
Hot Temperature

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Kim, J. H., Baik, K. H., Kang, B. S., Kim, S., Irokawa, Y., Ren, F., ... Chung, G. Y. (2004). 4H-SiC Schottky diode array with 430 A forward current. Electrochemical and Solid-State Letters, 7(6). https://doi.org/10.1149/1.1697908

4H-SiC Schottky diode array with 430 A forward current. / Kim, Ji Hyun; Baik, K. H.; Kang, B. S.; Kim, S.; Irokawa, Y.; Ren, F.; Pearton, S. J.; Chung, G. Y.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 6, 16.06.2004.

Research output: Contribution to journalArticle

Kim, JH, Baik, KH, Kang, BS, Kim, S, Irokawa, Y, Ren, F, Pearton, SJ & Chung, GY 2004, '4H-SiC Schottky diode array with 430 A forward current', Electrochemical and Solid-State Letters, vol. 7, no. 6. https://doi.org/10.1149/1.1697908
Kim, Ji Hyun ; Baik, K. H. ; Kang, B. S. ; Kim, S. ; Irokawa, Y. ; Ren, F. ; Pearton, S. J. ; Chung, G. Y. / 4H-SiC Schottky diode array with 430 A forward current. In: Electrochemical and Solid-State Letters. 2004 ; Vol. 7, No. 6.
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