4H-SiC Schottky diode array with 430 A forward current

Jihyun Kim, K. H. Baik, B. S. Kang, S. Kim, Y. Irokawa, F. Ren, S. J. Pearton, G. Y. Chung

Research output: Contribution to journalArticle


An array (305 devices) of 500 × 500 μm 4H-SiC Schottky rectifiers was interconnected using electroplated Au and clamped in a Cu pressure contact flat package. A peak total forward current of 430 A at 5.7V was achieved, with an on-state resistance (Ron) of 5.8 × 10-3 Ωcm2. The figure-of-merit, VB2/R on, where VB is the reverse breakdown voltage, was 0.69MW/cm2. Thermal simulations showed that the Cu press-pack was capable of maintaining the temperature of the SiC array at < 315 K under pulsed conditions whereas without this heat-sinking the temperature rise was extremely rapid.

Original languageEnglish
Pages (from-to)G125-G127
JournalElectrochemical and Solid-State Letters
Issue number6
Publication statusPublished - 2004
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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    Kim, J., Baik, K. H., Kang, B. S., Kim, S., Irokawa, Y., Ren, F., Pearton, S. J., & Chung, G. Y. (2004). 4H-SiC Schottky diode array with 430 A forward current. Electrochemical and Solid-State Letters, 7(6), G125-G127. https://doi.org/10.1149/1.1697908