An array (305 devices) of 500 × 500 μm 4H-SiC Schottky rectifiers was interconnected using electroplated Au and clamped in a Cu pressure contact flat package. A peak total forward current of 430 A at 5.7V was achieved, with an on-state resistance (Ron) of 5.8 × 10-3 Ωcm2. The figure-of-merit, VB2/R on, where VB is the reverse breakdown voltage, was 0.69MW/cm2. Thermal simulations showed that the Cu press-pack was capable of maintaining the temperature of the SiC array at < 315 K under pulsed conditions whereas without this heat-sinking the temperature rise was extremely rapid.
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering