5 nm thick lanthanum oxide thin films grown on Si(100) by atomic layer deposition: The effect of post-annealing on the electrical properties

Sang Jin Jo, Jeong Sook Ha, Nam Kyun Park, Dong Kyun Kang, Byong Ho Kim

Research output: Contribution to journalArticle

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Amorphous stoichiometric lanthanum oxide (La 2O 3) thin films were grown on Si(100) by atomic layer deposition technique using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione and water (H 2O) as precursors. The structural and electrical properties were investigated by transmission electron microscope, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), current-voltage (I-V) and capacitance-voltage (C-V) measurements. In particular, the effects of thermal annealing on the La 2O 3 film properties such as crystallinity, I-V, and C-V characteristics were measured. Post-annealing at 700 °C improved the electrical properties to reduce the leakage current density up to 2 × 10 - 7 A/cm 2 at the bias voltage of + 1 V. It was also observed that the capacitance increased and the shift of the flat band voltage, V FB, disappeared with the post-annealing.

Original languageEnglish
Pages (from-to)253-257
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2006 Aug 14



  • Atomic layer deposition
  • High-k dielectrics
  • La O
  • Post-annealing effect

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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