5 nm thick lanthanum oxide thin films grown on Si(100) by atomic layer deposition: The effect of post-annealing on the electrical properties

Engineering & Materials Science

• Lanthanum oxides 100%
• Atomic layer deposition 83%
• Oxide films 67%
• Electric properties 58%
• Annealing 54%
• Thin films 51%
• Capacitance 31%
• Electric potential 28%
• Capacitance measurement 26%
• Lanthanum 26%
• Voltage measurement 22%
• Bias voltage 22%
• X ray photoelectron spectroscopy 22%
• Crystallinity 22%
• Structural properties 19%
• Leakage currents 19%
• X ray diffraction 17%
• Current density 17%
• Electron microscopes 17%
• Water 9%
• Hot Temperature 8%

Physics & Astronomy

• lanthanum oxides 81%
• atomic layer epitaxy 56%
• electrical properties 40%
• annealing 32%
• electric potential 29%
• capacitance 29%
• thin films 28%
• capacitance-voltage characteristics 22%
• lanthanum 19%
• electrical measurement 17%
• x rays 16%
• crystallinity 16%
• leakage 15%
• photoelectron spectroscopy 15%
• electron microscopes 14%
• current density 13%
• shift 11%
• water 10%
• diffraction 9%

Chemical Compounds

• Atomic Layer Epitaxy 63%
• Electrical Property 45%
• Voltage 39%
• Leakage Current 35%
• Deposition Technique 29%
• Oxide 29%
• Annealing 21%
• Crystallinity 20%
• Current Density 20%
• X-Ray Photoelectron Spectroscopy 19%
• Amorphous Material 18%
• Electron Particle 14%
• X-Ray Diffraction 13%
• Liquid Film 13%