50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs

Seshadri Subbanna, Gregory Freeman, Jae-Sung Rieh, David Ahlgren, Kenneth Stein, Carl Dickey, James Mecke, Peter Bacon, Robert Groves, Mounir Meghelli, Mehmet Soyuer, Basanth Jagannathan, Kathryn Schonenberg, Shwu Jen Jeng, Alvin Joseph, Douglas Coolbaugh, Richard Volant, David Greenberg, Huajie Chen, Kevin BrelsfordDavid Harame, James Dunn, Lawrence Larson, Dean Herman, Bernard Meyerson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BICMOS technology is a stable, ultra-high performance, semiconductor technology capable of Supporting mixed-signal, very large-scale integration (VLSI) circuit designs for a variety of emerging Communication applications. This technology is supported by a computer-aided design (CAD) system that supports a variety of high-performance circuit designs, mixed-signal circuit block reuse, and the ability to accurately predict circuit performance at the highest frequencies. This paper summarizes the progress this technology has made in recent years in moving from the research laboratory to a production environment. We also specifically address performance, operating voltage, reliability and integration considerations for using 100-200 GHz SiGe HBTs in high-speed (10-40 Gb/s) network ICs, an application space previously only addressed by InP technology. All indications are that SiGe will be very successful at addressing this new application space, and all facets of the networking IC market.

Original languageEnglish
Pages (from-to)1111-1123
Number of pages13
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number2 B
Publication statusPublished - 2002 Feb 1
Externally publishedYes

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Keywords

  • 40 Gb/s circuits
  • BICMOS
  • HBT
  • Hetero-junction bipolar transistor
  • High-speed
  • Mixed-signal
  • OC 768
  • Opto-electronics
  • SiGe
  • Silicon-germanium

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Subbanna, S., Freeman, G., Rieh, J-S., Ahlgren, D., Stein, K., Dickey, C., Mecke, J., Bacon, P., Groves, R., Meghelli, M., Soyuer, M., Jagannathan, B., Schonenberg, K., Jeng, S. J., Joseph, A., Coolbaugh, D., Volant, R., Greenberg, D., Chen, H., ... Meyerson, B. (2002). 50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(2 B), 1111-1123.