6-18 GHz, 8.1W size-efficient GaN distributed amplifier MMIC

Ji Hyun Kim, H. Park, S. Lee, Y. Kwon

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A 6-18 GHz, 8.1 W gallium nitride (GaN) distributed amplifier (DA) monolithic microwave integrated circuit (MMIC) is presented with compact size. To accomplish high-output power density with compact size, the last two sections of the DA consist of small-sized FETs. This approach improves the output return loss and allows the drain line lengths to be reduced thereby increasing the drain cut-off frequency and reducing circuit size, which results in increased gain and output power characteristics up to higher frequencies. Source via holes of GaN high electron mobility transistors (HEMTs) are also shared to reduce chip size. The proposed DA is implemented as a two-stage DA using a commercial 0.25 μm GaN MMIC process. It shows 8.1 W average continuous wave output power and 6.8 dB average associated gain from 6 to 18 GHz under 36 V drain bias with 6.7 mm2 chip area. The proposed DA obtains 1.21 W/mm2 output power density and 1.02 dB/mm2 gain density.

Original languageEnglish
Pages (from-to)622-624
Number of pages3
JournalElectronics Letters
Volume52
Issue number8
DOIs
Publication statusPublished - 2016 Apr 14
Externally publishedYes

Fingerprint

Gallium nitride
Monolithic microwave integrated circuits
Cutoff frequency
High electron mobility transistors
Field effect transistors
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

6-18 GHz, 8.1W size-efficient GaN distributed amplifier MMIC. / Kim, Ji Hyun; Park, H.; Lee, S.; Kwon, Y.

In: Electronics Letters, Vol. 52, No. 8, 14.04.2016, p. 622-624.

Research output: Contribution to journalArticle

Kim, Ji Hyun ; Park, H. ; Lee, S. ; Kwon, Y. / 6-18 GHz, 8.1W size-efficient GaN distributed amplifier MMIC. In: Electronics Letters. 2016 ; Vol. 52, No. 8. pp. 622-624.
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