A 0.017 μJ/sample 313K sample/sec clamped sensing-based time domain CMOS temperature sensor

Se Chun Park, Sung Dae Choi, Hyeonseok Hwang, Byeonghak Jo, Seung Baek Park, Soo-Won Kim

Research output: Contribution to journalArticle


This paper describes the design of a CMOS temperature sensor intended to compensate for the thermal effect of NAND Flash cells. The temperature sensor is mainly composed of a SENSOR part and COUNTER part. The SENSOR part generates a pulse (TPTAT); its width is proportional to absolute temperature (PTAT). Futhermore, the clamped sensing scheme is used to eliminate the effects of temperature and process skew variation of sensing circuits. The COUNTER part converts TPTAT to digital codes. The proposed temperature sensor consumes a 0.017 μJ/sample at a conversion rate of 313K sample/sec.

Original languageEnglish
JournalIEICE Electronics Express
Issue number5
Publication statusPublished - 2015 Mar 30



  • Clamped sensing
  • CMOS temperature sensor
  • PTAT
  • Temperature coefficient

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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