A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

B. A. Orner, Q. Z. Liu, B. Rainey, A. Stricker, P. Geiss, P. Gray, M. Zierak, M. Gordon, D. Collins, V. Ramachandran, W. Hodge, C. Willets, A. Joseph, J. Dunn, Jae-Sung Rieh, S. J. Jeng, E. Eld, G. Freeman, D. Ahlgren

Research output: Chapter in Book/Report/Conference proceedingConference contribution

76 Citations (Scopus)

Abstract

We present for the first time a very high performance SiGeHBT with fT = 200 GHz and fmax = 280 GHz that has been successfully integrated with IBM's standard 0.13 m foundry-compatible CMOS node into our next generation BiCMOS 8HP technology.

Original languageEnglish
Title of host publicationProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages203-206
Number of pages4
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventProceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting - Toulouse, France
Duration: 2003 Sep 282003 Sep 30

Other

OtherProceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting
CountryFrance
CityToulouse
Period03/9/2803/9/30

Fingerprint

BiCMOS technology
Heterojunction bipolar transistors
Foundries

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Orner, B. A., Liu, Q. Z., Rainey, B., Stricker, A., Geiss, P., Gray, P., ... Ahlgren, D. (2003). A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT. In Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 203-206)

A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT. / Orner, B. A.; Liu, Q. Z.; Rainey, B.; Stricker, A.; Geiss, P.; Gray, P.; Zierak, M.; Gordon, M.; Collins, D.; Ramachandran, V.; Hodge, W.; Willets, C.; Joseph, A.; Dunn, J.; Rieh, Jae-Sung; Jeng, S. J.; Eld, E.; Freeman, G.; Ahlgren, D.

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2003. p. 203-206.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Orner, BA, Liu, QZ, Rainey, B, Stricker, A, Geiss, P, Gray, P, Zierak, M, Gordon, M, Collins, D, Ramachandran, V, Hodge, W, Willets, C, Joseph, A, Dunn, J, Rieh, J-S, Jeng, SJ, Eld, E, Freeman, G & Ahlgren, D 2003, A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT. in Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. pp. 203-206, Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting, Toulouse, France, 03/9/28.
Orner BA, Liu QZ, Rainey B, Stricker A, Geiss P, Gray P et al. A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT. In Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2003. p. 203-206
Orner, B. A. ; Liu, Q. Z. ; Rainey, B. ; Stricker, A. ; Geiss, P. ; Gray, P. ; Zierak, M. ; Gordon, M. ; Collins, D. ; Ramachandran, V. ; Hodge, W. ; Willets, C. ; Joseph, A. ; Dunn, J. ; Rieh, Jae-Sung ; Jeng, S. J. ; Eld, E. ; Freeman, G. ; Ahlgren, D. / A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT. Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2003. pp. 203-206
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AU - Joseph, A.

AU - Dunn, J.

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