A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

B. A. Orner, Q. Z. Liu, B. Rainey, A. Stricker, P. Geiss, P. Gray, M. Zierak, M. Gordon, D. Collins, V. Ramachandran, W. Hodge, C. Willets, A. Joseph, J. Dunn, J. S. Rieh, S. J. Jeng, E. Eld, G. Freeman, D. Ahlgren

Research output: Contribution to conferencePaper

80 Citations (Scopus)

Abstract

We present for the first time a very high performance SiGeHBT with fT = 200 GHz and fmax = 280 GHz that has been successfully integrated with IBM's standard 0.13 m foundry-compatible CMOS node into our next generation BiCMOS 8HP technology.

Original languageEnglish
Pages203-206
Number of pages4
Publication statusPublished - 2003
Externally publishedYes
EventProceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting - Toulouse, France
Duration: 2003 Sep 282003 Sep 30

Conference

ConferenceProceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting
CountryFrance
CityToulouse
Period03/9/2803/9/30

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A 0.13 m BiCMOS technology featuring a 200/280 GHz (f<sub>T</sub>/f<sub>max</sub>) SiGe HBT'. Together they form a unique fingerprint.

  • Cite this

    Orner, B. A., Liu, Q. Z., Rainey, B., Stricker, A., Geiss, P., Gray, P., Zierak, M., Gordon, M., Collins, D., Ramachandran, V., Hodge, W., Willets, C., Joseph, A., Dunn, J., Rieh, J. S., Jeng, S. J., Eld, E., Freeman, G., & Ahlgren, D. (2003). A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT. 203-206. Paper presented at Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting, Toulouse, France.