A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

B. A. Orner, Q. Z. Liu, B. Rainey, A. Stricker, P. Geiss, P. Gray, M. Zierak, M. Gordon, D. Collins, V. Ramachandran, W. Hodge, C. Willets, A. Joseph, J. Dunn, J. S. Rieh, S. J. Jeng, E. Eld, G. Freeman, D. Ahlgren

Research output: Contribution to conferencePaper

80 Citations (Scopus)

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Engineering & Materials Science