A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

B. A. Orner, Q. Z. Liu, B. Rainey, A. Stricker, P. Geiss, P. Gray, M. Zierak, M. Gordon, D. Collins, V. Ramachandran, W. Hodge, C. Willets, A. Joseph, J. Dunn, J. S. Rieh, S. J. Jeng, E. Eld, G. Freeman, D. Ahlgren

Research output: Contribution to conferencePaperpeer-review

80 Citations (Scopus)

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