TY - GEN
T1 - A 0.385-pJ/bit 10-Gb/s TIA-Terminated Di-Code Transceiver with Edge-Delayed Equalization, ECC, and Mismatch Calibration for HBM Interfaces
AU - Park, Hyunsu
AU - Choi, Yoonjae
AU - Sim, Jincheol
AU - Choi, Jonghyuck
AU - Kwon, Youngwook
AU - Song, Junyoung
AU - Kim, Chulwoo
N1 - Funding Information:
This work was supported by an Institute for Information & Communication Technology Promotion (IITP) grant, funded by the Korean government (MISP) (No. 2020-0-01300, Development of AI-specific parallel high-speed memory interface).
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - The bandwidth of parallel DRAM I/O has increased to meet big-data requirements. High bandwidth memory (HBM) interfaces use up to 1024 pins, and with an increased clock frequency, their power consumption has also increased [1]. Figure 28.5.1 shows four HBM interface approaches. Conventional HBM interfaces use a termination-less structure at the receiver to reduce power consumption. For higher data rates receiver-side termination can be used to improve signal integrity. However, this causes a large static current for long consecutive identical digits (CID). Di-code signaling can be used in HBM interfaces to reduce this static current. Nevertheless, there are still design constraints for conventional di-code interfaces, such as equalization, offset voltage, and series capacitor implementation constraints [2]. The series capacitor, specifically, causes frequency dependence and parasitic capacitance, which degrades its frequency range. In this paper, a capacitor-less and high-efficiency di-code transceiver using trans-impedance-amplifier (TIA) termination is implemented, as shown in Fig. 28.5.1. An adjustable inverter-based TIA is adopted for DC balancing the di-code signaling. A common-mode voltage calibration technique is proposed to minimize the static current during middle-level transmission. Several equalizing techniques for the di-code signaling are proposed to increase the sampling margin at the receiver and to maintain the common-mode voltage of di-code outputs. Also, an error correction circuit (ECC), based on di-code signaling, is implemented to reduce bit errors.
AB - The bandwidth of parallel DRAM I/O has increased to meet big-data requirements. High bandwidth memory (HBM) interfaces use up to 1024 pins, and with an increased clock frequency, their power consumption has also increased [1]. Figure 28.5.1 shows four HBM interface approaches. Conventional HBM interfaces use a termination-less structure at the receiver to reduce power consumption. For higher data rates receiver-side termination can be used to improve signal integrity. However, this causes a large static current for long consecutive identical digits (CID). Di-code signaling can be used in HBM interfaces to reduce this static current. Nevertheless, there are still design constraints for conventional di-code interfaces, such as equalization, offset voltage, and series capacitor implementation constraints [2]. The series capacitor, specifically, causes frequency dependence and parasitic capacitance, which degrades its frequency range. In this paper, a capacitor-less and high-efficiency di-code transceiver using trans-impedance-amplifier (TIA) termination is implemented, as shown in Fig. 28.5.1. An adjustable inverter-based TIA is adopted for DC balancing the di-code signaling. A common-mode voltage calibration technique is proposed to minimize the static current during middle-level transmission. Several equalizing techniques for the di-code signaling are proposed to increase the sampling margin at the receiver and to maintain the common-mode voltage of di-code outputs. Also, an error correction circuit (ECC), based on di-code signaling, is implemented to reduce bit errors.
UR - http://www.scopus.com/inward/record.url?scp=85128319813&partnerID=8YFLogxK
U2 - 10.1109/ISSCC42614.2022.9731740
DO - 10.1109/ISSCC42614.2022.9731740
M3 - Conference contribution
AN - SCOPUS:85128319813
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 452
EP - 454
BT - 2022 IEEE International Solid-State Circuits Conference, ISSCC 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Solid-State Circuits Conference, ISSCC 2022
Y2 - 20 February 2022 through 26 February 2022
ER -