A 100-element HBT grid amplifier

Moonil Kim; Emilio A. Sovero; Jonathan B. Hacker; Michael P. De Lisio; Jung Chih Chiao; Shi Jie Li; David R. Gagnon; James J. Rosenberg; David B. Rutledge

doi:10.1109/9780470544068.ch4

A 100-element HBT grid amplifier

Moonil Kim, Emilio A. Sovero, Jonathan B. Hacker, Michael P. De Lisio, Jung Chih Chiao, Shi Jie Li, David R. Gagnon, James J. Rosenberg, David B. Rutledge

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

A l00-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction-bipolar-transistor (HBT) differential-pairs. The metal grid pattern was empirically designed to provide effective coupling between the HBT’s and free space. Two independent measurements, one with focusing lenses, the other without, were used to characterize the grid. In each case, the peak gain was 10 dB at 10 GHz with a 3-dB bandwidth of 1 GHz. The input and output return loss were better than 15 dB at 10 GHz. The maximum output power was 450 mW, and the minimum noise figure was 7 dB. By varying the bias, a signal could be amplitude modulated with a modulation index as large as 0.65. Tests show that the grid was quite tolerant of failures—the output power dropped by only 1 dB when 10% of the inputs were detuned, The grid amplifier is a multi-mode device that amplifies beams of different shapes and angles. Beams with incidence angles up to 30° were amplified with less than a 3-dB drop in gain.

Original language	English
Title of host publication	Active Antennas and Quasi-Optical Arrays
Publisher	John Wiley and Sons Inc.
Pages	137-147
Number of pages	11
ISBN (Electronic)	9780470544068
ISBN (Print)	0780334868, 9780780334861
DOIs	https://doi.org/10.1109/9780470544068.ch4
Publication status	Published - 2009 Jan 1
Externally published	Yes

Keywords

Gain
Gain measurement
Heterojunction bipolar transistors
Lenses
Oscillators
Power amplifiers
Strips

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1109/9780470544068.ch4

Cite this

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title = "A 100-element HBT grid amplifier",

abstract = "A l00-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction-bipolar-transistor (HBT) differential-pairs. The metal grid pattern was empirically designed to provide effective coupling between the HBT{\textquoteright}s and free space. Two independent measurements, one with focusing lenses, the other without, were used to characterize the grid. In each case, the peak gain was 10 dB at 10 GHz with a 3-dB bandwidth of 1 GHz. The input and output return loss were better than 15 dB at 10 GHz. The maximum output power was 450 mW, and the minimum noise figure was 7 dB. By varying the bias, a signal could be amplitude modulated with a modulation index as large as 0.65. Tests show that the grid was quite tolerant of failures—the output power dropped by only 1 dB when 10% of the inputs were detuned, The grid amplifier is a multi-mode device that amplifies beams of different shapes and angles. Beams with incidence angles up to 30° were amplified with less than a 3-dB drop in gain.",

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author = "Moonil Kim and Sovero, {Emilio A.} and Hacker, {Jonathan B.} and {De Lisio}, {Michael P.} and Chiao, {Jung Chih} and Li, {Shi Jie} and Gagnon, {David R.} and Rosenberg, {James J.} and Rutledge, {David B.}",

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doi = "10.1109/9780470544068.ch4",

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AU - Kim, Moonil

AU - Sovero, Emilio A.

AU - Hacker, Jonathan B.

AU - De Lisio, Michael P.

AU - Chiao, Jung Chih

AU - Li, Shi Jie

AU - Gagnon, David R.

AU - Rosenberg, James J.

AU - Rutledge, David B.

PY - 2009/1/1

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N2 - A l00-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction-bipolar-transistor (HBT) differential-pairs. The metal grid pattern was empirically designed to provide effective coupling between the HBT’s and free space. Two independent measurements, one with focusing lenses, the other without, were used to characterize the grid. In each case, the peak gain was 10 dB at 10 GHz with a 3-dB bandwidth of 1 GHz. The input and output return loss were better than 15 dB at 10 GHz. The maximum output power was 450 mW, and the minimum noise figure was 7 dB. By varying the bias, a signal could be amplitude modulated with a modulation index as large as 0.65. Tests show that the grid was quite tolerant of failures—the output power dropped by only 1 dB when 10% of the inputs were detuned, The grid amplifier is a multi-mode device that amplifies beams of different shapes and angles. Beams with incidence angles up to 30° were amplified with less than a 3-dB drop in gain.

AB - A l00-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction-bipolar-transistor (HBT) differential-pairs. The metal grid pattern was empirically designed to provide effective coupling between the HBT’s and free space. Two independent measurements, one with focusing lenses, the other without, were used to characterize the grid. In each case, the peak gain was 10 dB at 10 GHz with a 3-dB bandwidth of 1 GHz. The input and output return loss were better than 15 dB at 10 GHz. The maximum output power was 450 mW, and the minimum noise figure was 7 dB. By varying the bias, a signal could be amplitude modulated with a modulation index as large as 0.65. Tests show that the grid was quite tolerant of failures—the output power dropped by only 1 dB when 10% of the inputs were detuned, The grid amplifier is a multi-mode device that amplifies beams of different shapes and angles. Beams with incidence angles up to 30° were amplified with less than a 3-dB drop in gain.

KW - Gain

KW - Gain measurement

KW - Heterojunction bipolar transistors

KW - Lenses

KW - Oscillators

KW - Power amplifiers

KW - Strips

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PB - John Wiley and Sons Inc.

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A 100-element HBT grid amplifier

Abstract

Keywords

ASJC Scopus subject areas

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