A 100-Mesfet Planar Grid Oscillator

Zoya B. Popović; Robert M. Weikle; Moonil Kim; David B. Rutledge

doi:10.1109/22.102960

A 100-Mesfet Planar Grid Oscillator

Zoya B. Popović, Robert M. Weikle, Moonil Kim, David B. Rutledge

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

125 Citations (Scopus)

Abstract

In this work we present a 100-MESFET oscillator which gives 21 W of CW effective radiated power (ERP) with a 16 dB directivity and a 20% dc to RF conversion efficiency at 5 GHz. The oscillator is a planar grid structure periodically loaded with transistors. The grid radiates and the devices combine quasi-optically and lock to each other. The oscillator can also be quasi-optically injection-locked to an external signal. The planar grid structure is very simple. All of the devices share the same bias, and they can be power and frequency tuned with a mirror behind the grid or dielectric slabs in front of it. An equivalent circuit for an infinite grid predicts the mirror frequency tuning. The planar property of the oscillator offers the possibility of a wafer-scale monolithically integrated source. Thousands of active solid-state devices can potentially be integrated in a high-power source for microwave or millimeter-wave applications.

Original language	English
Pages (from-to)	193-200
Number of pages	8
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	39
Issue number	2
DOIs	https://doi.org/10.1109/22.102960
Publication status	Published - 1991 Feb

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/22.102960

Cite this

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abstract = "In this work we present a 100-MESFET oscillator which gives 21 W of CW effective radiated power (ERP) with a 16 dB directivity and a 20% dc to RF conversion efficiency at 5 GHz. The oscillator is a planar grid structure periodically loaded with transistors. The grid radiates and the devices combine quasi-optically and lock to each other. The oscillator can also be quasi-optically injection-locked to an external signal. The planar grid structure is very simple. All of the devices share the same bias, and they can be power and frequency tuned with a mirror behind the grid or dielectric slabs in front of it. An equivalent circuit for an infinite grid predicts the mirror frequency tuning. The planar property of the oscillator offers the possibility of a wafer-scale monolithically integrated source. Thousands of active solid-state devices can potentially be integrated in a high-power source for microwave or millimeter-wave applications.",

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AB - In this work we present a 100-MESFET oscillator which gives 21 W of CW effective radiated power (ERP) with a 16 dB directivity and a 20% dc to RF conversion efficiency at 5 GHz. The oscillator is a planar grid structure periodically loaded with transistors. The grid radiates and the devices combine quasi-optically and lock to each other. The oscillator can also be quasi-optically injection-locked to an external signal. The planar grid structure is very simple. All of the devices share the same bias, and they can be power and frequency tuned with a mirror behind the grid or dielectric slabs in front of it. An equivalent circuit for an infinite grid predicts the mirror frequency tuning. The planar property of the oscillator offers the possibility of a wafer-scale monolithically integrated source. Thousands of active solid-state devices can potentially be integrated in a high-power source for microwave or millimeter-wave applications.

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A 100-Mesfet Planar Grid Oscillator

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