A 100mK-NETD 100ms-startup-time 80×60 micro-bolometer CMOS thermal imager integrated with a 0.234mm2 1.89μVrms noise 12b biasing DAC

Ki Duk Kim, Seunghyun Park, Kye Seok Yoon, Gyeong Gu Kang, Hyun Ki Han, Ji Su Choi, Min Woo Ko, Jeong Hyun Cho, Sangjin Lim, Hyung Min Lee, Hyun Sik Kim, Kwyro Lee, Gyu Hyeong Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A micro-bolometer focal plane array (MBFPA) detector is one of the best candidates for thermal imaging cameras due to its excellent uncooled imaging performance with low manufacturing cost [1-4]. In Fig. 10.8.1, remote infra-red signals from thermal objects are maximized and absorbed at the MEMS micro-bolometer pixels having a λ/4 cavity structure, and they are then converted into resistance of a thermistor layer in each cell. Then, a CMOS analog front-end (AFE) reads out the cell resistance value in current-mode by applying a voltage bias to the micro-bolometer pixel. In the readout process, the skimming cell that does not respond to the infra-red signal is used to remove the offset components by generating an opposite-phase current, which in turn alleviates the system required resolution. Nevertheless, there is still very significant fixed-pattern noise (FPN) resulting from process, voltage, and temperature (PVT) variations, and this severely limits the responsivity/dynamic range trade-off. Addressing the problem, both bias voltages (VFID & VGSK) applied to sensing and skimming cells, respectively, should be precisely adjusted so as to avoid any saturation while maintaining sufficient responsivity, and their noise levels must be low enough considering the noise amplification in the signal chain.

Original languageEnglish
Title of host publication2018 IEEE International Solid-State Circuits Conference, ISSCC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages192-194
Number of pages3
ISBN (Electronic)9781509049394
DOIs
Publication statusPublished - 2018 Mar 8
Event65th IEEE International Solid-State Circuits Conference, ISSCC 2018 - San Francisco, United States
Duration: 2018 Feb 112018 Feb 15

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume61
ISSN (Print)0193-6530

Other

Other65th IEEE International Solid-State Circuits Conference, ISSCC 2018
CountryUnited States
CitySan Francisco
Period18/2/1118/2/15

Fingerprint

Bolometers
Image sensors
Bias voltage
Pixels
Infrared radiation
Thermistors
Focal plane arrays
Infrared imaging
MEMS
Amplification
Cameras
Detectors
Imaging techniques
Electric potential
Hot Temperature
Costs
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kim, K. D., Park, S., Yoon, K. S., Kang, G. G., Han, H. K., Choi, J. S., ... Cho, G. H. (2018). A 100mK-NETD 100ms-startup-time 80×60 micro-bolometer CMOS thermal imager integrated with a 0.234mm2 1.89μVrms noise 12b biasing DAC. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018 (pp. 192-194). (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 61). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC.2018.8310249

A 100mK-NETD 100ms-startup-time 80×60 micro-bolometer CMOS thermal imager integrated with a 0.234mm2 1.89μVrms noise 12b biasing DAC. / Kim, Ki Duk; Park, Seunghyun; Yoon, Kye Seok; Kang, Gyeong Gu; Han, Hyun Ki; Choi, Ji Su; Ko, Min Woo; Cho, Jeong Hyun; Lim, Sangjin; Lee, Hyung Min; Kim, Hyun Sik; Lee, Kwyro; Cho, Gyu Hyeong.

2018 IEEE International Solid-State Circuits Conference, ISSCC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 192-194 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 61).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, KD, Park, S, Yoon, KS, Kang, GG, Han, HK, Choi, JS, Ko, MW, Cho, JH, Lim, S, Lee, HM, Kim, HS, Lee, K & Cho, GH 2018, A 100mK-NETD 100ms-startup-time 80×60 micro-bolometer CMOS thermal imager integrated with a 0.234mm2 1.89μVrms noise 12b biasing DAC. in 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 61, Institute of Electrical and Electronics Engineers Inc., pp. 192-194, 65th IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, United States, 18/2/11. https://doi.org/10.1109/ISSCC.2018.8310249
Kim KD, Park S, Yoon KS, Kang GG, Han HK, Choi JS et al. A 100mK-NETD 100ms-startup-time 80×60 micro-bolometer CMOS thermal imager integrated with a 0.234mm2 1.89μVrms noise 12b biasing DAC. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 192-194. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). https://doi.org/10.1109/ISSCC.2018.8310249
Kim, Ki Duk ; Park, Seunghyun ; Yoon, Kye Seok ; Kang, Gyeong Gu ; Han, Hyun Ki ; Choi, Ji Su ; Ko, Min Woo ; Cho, Jeong Hyun ; Lim, Sangjin ; Lee, Hyung Min ; Kim, Hyun Sik ; Lee, Kwyro ; Cho, Gyu Hyeong. / A 100mK-NETD 100ms-startup-time 80×60 micro-bolometer CMOS thermal imager integrated with a 0.234mm2 1.89μVrms noise 12b biasing DAC. 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 192-194 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).
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abstract = "A micro-bolometer focal plane array (MBFPA) detector is one of the best candidates for thermal imaging cameras due to its excellent uncooled imaging performance with low manufacturing cost [1-4]. In Fig. 10.8.1, remote infra-red signals from thermal objects are maximized and absorbed at the MEMS micro-bolometer pixels having a λ/4 cavity structure, and they are then converted into resistance of a thermistor layer in each cell. Then, a CMOS analog front-end (AFE) reads out the cell resistance value in current-mode by applying a voltage bias to the micro-bolometer pixel. In the readout process, the skimming cell that does not respond to the infra-red signal is used to remove the offset components by generating an opposite-phase current, which in turn alleviates the system required resolution. Nevertheless, there is still very significant fixed-pattern noise (FPN) resulting from process, voltage, and temperature (PVT) variations, and this severely limits the responsivity/dynamic range trade-off. Addressing the problem, both bias voltages (VFID & VGSK) applied to sensing and skimming cells, respectively, should be precisely adjusted so as to avoid any saturation while maintaining sufficient responsivity, and their noise levels must be low enough considering the noise amplification in the signal chain.",
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