A 12-channel CMOS preamplifier-shaper-discriminator ASIC for APD and gas counters

Jungyeol Yeom, I. Defendi, H. Takahashi, K. Zeitelhack, M. Nakazawa, H. Murayama

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A 12-Channel (Ch) CMOS Preamplifier-Shaper-Discriminator ASIC designed for avalanche photodiode (APD) and gas counter readout has been fabricated on a 2.4 mm × 2.4 mm die area using ROHM 0.35-μCMOS technology. This mixed signal ASIC consists of both analog and digital components and a window type discriminator is easily implemented through the use of a digital encoder to encode outputs from two comparators. The charge sensitive preamplifier is based on gain-boosted (regulated) cascode topology. The gain (voltage output to charge input) is 0.9 mV/fC and has been tested to have a low optimum Equivalent Noise Charge (ENC) of about 370 e- + 30 e-/pF rms at a shaping time of 0.5 μs. The gain of the shaper is about 2.5 mV/fC and its peaking time can be varied from about 0.3 μs to 0.8 μs via an external pin. This chip is capable of sensing bipolar signals and is linear at least up to 320 fC for negative charge and 150 fC for positive charge. The average ENC of each channel has been calculated to be about 640 e- + 30 e -/pF. The power consumption of the chip is approximately 0.13 W.

Original languageEnglish
Article number1684088
Pages (from-to)2204-2208
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume53
Issue number4
DOIs
Publication statusPublished - 2006 Aug 1
Externally publishedYes

Fingerprint

Avalanche photodiodes
shapers
discriminators
Discriminators
application specific integrated circuits
preamplifiers
Application specific integrated circuits
avalanches
photodiodes
CMOS
counters
Gases
chips
gases
Electric power utilization
output
Topology
coders
readout
Electric potential

Keywords

  • Application-specific integrated circuit (ASIC)
  • Avalanche photodiode (APD)
  • Complementary metal-oxide semi-conductor (CMOS)
  • Gas detector

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Yeom, J., Defendi, I., Takahashi, H., Zeitelhack, K., Nakazawa, M., & Murayama, H. (2006). A 12-channel CMOS preamplifier-shaper-discriminator ASIC for APD and gas counters. IEEE Transactions on Nuclear Science, 53(4), 2204-2208. [1684088]. https://doi.org/10.1109/TNS.2006.878573

A 12-channel CMOS preamplifier-shaper-discriminator ASIC for APD and gas counters. / Yeom, Jungyeol; Defendi, I.; Takahashi, H.; Zeitelhack, K.; Nakazawa, M.; Murayama, H.

In: IEEE Transactions on Nuclear Science, Vol. 53, No. 4, 1684088, 01.08.2006, p. 2204-2208.

Research output: Contribution to journalArticle

Yeom, J, Defendi, I, Takahashi, H, Zeitelhack, K, Nakazawa, M & Murayama, H 2006, 'A 12-channel CMOS preamplifier-shaper-discriminator ASIC for APD and gas counters', IEEE Transactions on Nuclear Science, vol. 53, no. 4, 1684088, pp. 2204-2208. https://doi.org/10.1109/TNS.2006.878573
Yeom, Jungyeol ; Defendi, I. ; Takahashi, H. ; Zeitelhack, K. ; Nakazawa, M. ; Murayama, H. / A 12-channel CMOS preamplifier-shaper-discriminator ASIC for APD and gas counters. In: IEEE Transactions on Nuclear Science. 2006 ; Vol. 53, No. 4. pp. 2204-2208.
@article{9ab886a8720c4325a8ee9485a1e78f69,
title = "A 12-channel CMOS preamplifier-shaper-discriminator ASIC for APD and gas counters",
abstract = "A 12-Channel (Ch) CMOS Preamplifier-Shaper-Discriminator ASIC designed for avalanche photodiode (APD) and gas counter readout has been fabricated on a 2.4 mm × 2.4 mm die area using ROHM 0.35-μCMOS technology. This mixed signal ASIC consists of both analog and digital components and a window type discriminator is easily implemented through the use of a digital encoder to encode outputs from two comparators. The charge sensitive preamplifier is based on gain-boosted (regulated) cascode topology. The gain (voltage output to charge input) is 0.9 mV/fC and has been tested to have a low optimum Equivalent Noise Charge (ENC) of about 370 e- + 30 e-/pF rms at a shaping time of 0.5 μs. The gain of the shaper is about 2.5 mV/fC and its peaking time can be varied from about 0.3 μs to 0.8 μs via an external pin. This chip is capable of sensing bipolar signals and is linear at least up to 320 fC for negative charge and 150 fC for positive charge. The average ENC of each channel has been calculated to be about 640 e- + 30 e -/pF. The power consumption of the chip is approximately 0.13 W.",
keywords = "Application-specific integrated circuit (ASIC), Avalanche photodiode (APD), Complementary metal-oxide semi-conductor (CMOS), Gas detector",
author = "Jungyeol Yeom and I. Defendi and H. Takahashi and K. Zeitelhack and M. Nakazawa and H. Murayama",
year = "2006",
month = "8",
day = "1",
doi = "10.1109/TNS.2006.878573",
language = "English",
volume = "53",
pages = "2204--2208",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

TY - JOUR

T1 - A 12-channel CMOS preamplifier-shaper-discriminator ASIC for APD and gas counters

AU - Yeom, Jungyeol

AU - Defendi, I.

AU - Takahashi, H.

AU - Zeitelhack, K.

AU - Nakazawa, M.

AU - Murayama, H.

PY - 2006/8/1

Y1 - 2006/8/1

N2 - A 12-Channel (Ch) CMOS Preamplifier-Shaper-Discriminator ASIC designed for avalanche photodiode (APD) and gas counter readout has been fabricated on a 2.4 mm × 2.4 mm die area using ROHM 0.35-μCMOS technology. This mixed signal ASIC consists of both analog and digital components and a window type discriminator is easily implemented through the use of a digital encoder to encode outputs from two comparators. The charge sensitive preamplifier is based on gain-boosted (regulated) cascode topology. The gain (voltage output to charge input) is 0.9 mV/fC and has been tested to have a low optimum Equivalent Noise Charge (ENC) of about 370 e- + 30 e-/pF rms at a shaping time of 0.5 μs. The gain of the shaper is about 2.5 mV/fC and its peaking time can be varied from about 0.3 μs to 0.8 μs via an external pin. This chip is capable of sensing bipolar signals and is linear at least up to 320 fC for negative charge and 150 fC for positive charge. The average ENC of each channel has been calculated to be about 640 e- + 30 e -/pF. The power consumption of the chip is approximately 0.13 W.

AB - A 12-Channel (Ch) CMOS Preamplifier-Shaper-Discriminator ASIC designed for avalanche photodiode (APD) and gas counter readout has been fabricated on a 2.4 mm × 2.4 mm die area using ROHM 0.35-μCMOS technology. This mixed signal ASIC consists of both analog and digital components and a window type discriminator is easily implemented through the use of a digital encoder to encode outputs from two comparators. The charge sensitive preamplifier is based on gain-boosted (regulated) cascode topology. The gain (voltage output to charge input) is 0.9 mV/fC and has been tested to have a low optimum Equivalent Noise Charge (ENC) of about 370 e- + 30 e-/pF rms at a shaping time of 0.5 μs. The gain of the shaper is about 2.5 mV/fC and its peaking time can be varied from about 0.3 μs to 0.8 μs via an external pin. This chip is capable of sensing bipolar signals and is linear at least up to 320 fC for negative charge and 150 fC for positive charge. The average ENC of each channel has been calculated to be about 640 e- + 30 e -/pF. The power consumption of the chip is approximately 0.13 W.

KW - Application-specific integrated circuit (ASIC)

KW - Avalanche photodiode (APD)

KW - Complementary metal-oxide semi-conductor (CMOS)

KW - Gas detector

UR - http://www.scopus.com/inward/record.url?scp=33748337323&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748337323&partnerID=8YFLogxK

U2 - 10.1109/TNS.2006.878573

DO - 10.1109/TNS.2006.878573

M3 - Article

AN - SCOPUS:33748337323

VL - 53

SP - 2204

EP - 2208

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 4

M1 - 1684088

ER -