A 1.3 V input fast-transient-response time digital low-dropout regulator with a VSSa generator for DVFS system

Young Jae Min, Chan Hui Jeong, Junil Moon, Youngsun Han, Soo-Won Kim, Chulwoo Kim

Research output: Contribution to journalLetter

Abstract

A fast transient-response digital low-dropout regulator (D-LDO) is presented. To achieve fast-transient time, a VSSa generator and a coarse-fine power-MOS array techniques are proposed. The proposed D-LDO is implemented in a 65 nm CMOS technology with a die area of 0.067 mm2. The measured recovery time is less than 0.32 us when the load step-up time is 0.1 us from 2.5 mA to 120 mA, and the step-down time is 0.1 us at 1.2 V of supply voltage. Moreover, the voltage spikes are less than 190 mV.

Original languageEnglish
JournalIEICE Electronics Express
Volume14
Issue number13
DOIs
Publication statusPublished - 2017

Fingerprint

dropouts
regulators
transient response
Transient analysis
generators
Electric potential
downtime
electric potential
spikes
Recovery
CMOS
recovery

Keywords

  • Digital low-dropout (D-LDO) regulator
  • Dynamic voltage frequency scaling (DVFS)
  • Fast-transient-response time
  • Low-dropout (LDO) regulator

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

A 1.3 V input fast-transient-response time digital low-dropout regulator with a VSSa generator for DVFS system. / Min, Young Jae; Jeong, Chan Hui; Moon, Junil; Han, Youngsun; Kim, Soo-Won; Kim, Chulwoo.

In: IEICE Electronics Express, Vol. 14, No. 13, 2017.

Research output: Contribution to journalLetter

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AU - Min, Young Jae

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AU - Han, Youngsun

AU - Kim, Soo-Won

AU - Kim, Chulwoo

PY - 2017

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