Abstract
A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.
| Original language | English |
|---|---|
| Title of host publication | SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 113-115 |
| Number of pages | 3 |
| ISBN (Print) | 9781509016877 |
| DOIs | |
| Publication status | Published - 2016 Mar 31 |
| Event | 16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016 - Austin, United States Duration: 2016 Jan 24 → 2016 Jan 27 |
Other
| Other | 16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016 |
|---|---|
| Country | United States |
| City | Austin |
| Period | 16/1/24 → 16/1/27 |
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Keywords
- oscillators
- switches
- Transmitters
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Computer Networks and Communications
Cite this
A 130-GHz OOK transmitter in 65-nm CMOS technology. / Kim, Namhyung; Son, Heekang; Kim, Dong Hyun; Rieh, Jae-Sung.
SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Institute of Electrical and Electronics Engineers Inc., 2016. p. 113-115 7445484.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A 130-GHz OOK transmitter in 65-nm CMOS technology
AU - Kim, Namhyung
AU - Son, Heekang
AU - Kim, Dong Hyun
AU - Rieh, Jae-Sung
PY - 2016/3/31
Y1 - 2016/3/31
N2 - A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.
AB - A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.
KW - oscillators
KW - switches
KW - Transmitters
UR - http://www.scopus.com/inward/record.url?scp=84968733040&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84968733040&partnerID=8YFLogxK
U2 - 10.1109/SIRF.2016.7445484
DO - 10.1109/SIRF.2016.7445484
M3 - Conference contribution
AN - SCOPUS:84968733040
SN - 9781509016877
SP - 113
EP - 115
BT - SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
PB - Institute of Electrical and Electronics Engineers Inc.
ER -