A 130-GHz OOK transmitter in 65-nm CMOS technology

Namhyung Kim; Heekang Son; Dong Hyun Kim; Jae-Sung Rieh

doi:10.1109/SIRF.2016.7445484

A 130-GHz OOK transmitter in 65-nm CMOS technology

Namhyung Kim, Heekang Son, Dong Hyun Kim, Jae-Sung Rieh

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.

Original language	English
Title of host publication	SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	113-115
Number of pages	3
ISBN (Print)	9781509016877
DOIs	https://doi.org/10.1109/SIRF.2016.7445484
Publication status	Published - 2016 Mar 31
Event	16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016 - Austin, United States Duration: 2016 Jan 24 → 2016 Jan 27

Other

Other	16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016
Country	United States
City	Austin
Period	16/1/24 → 16/1/27

Keywords

oscillators
switches
Transmitters

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Computer Networks and Communications

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A 130-GHz OOK transmitter in 65-nm CMOS technology. / Kim, Namhyung; Son, Heekang; Kim, Dong Hyun; Rieh, Jae-Sung.

SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Institute of Electrical and Electronics Engineers Inc., 2016. p. 113-115 7445484.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, N, Son, H, Kim, DH & Rieh, J-S 2016, A 130-GHz OOK transmitter in 65-nm CMOS technology. in SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems., 7445484, Institute of Electrical and Electronics Engineers Inc., pp. 113-115, 16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016, Austin, United States, 16/1/24. https://doi.org/10.1109/SIRF.2016.7445484

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title = "A 130-GHz OOK transmitter in 65-nm CMOS technology",

abstract = "A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.",

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N2 - A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.

AB - A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.

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A 130-GHz OOK transmitter in 65-nm CMOS technology

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Keywords

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