A 130-GHz OOK transmitter in 65-nm CMOS technology

Namhyung Kim, Heekang Son, Dong Hyun Kim, Jae-Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 130-GHz OOK transmitter has been developed based on a 65-nm CMOS technology in this work. The transmitter is composed of a 130-GHz fundamental oscillator and a switch-based OOK modulator. The oscillator is based on an LC cross-coupled differential pair with a tapered buffer, while the switch adopts a 3-stage shunt configuration. The on/off power ratio of the switch is over 20 dB, and the transmitter exhibits an output power of -5.1 dBm with the switch turned on. The 3-dB bandwidth of the transmitter measured with a frequency domain technique is 16 GHz. The transmitter consumes 55.2 mW, mostly arising from the oscillator.

Original languageEnglish
Title of host publicationSiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages113-115
Number of pages3
ISBN (Print)9781509016877
DOIs
Publication statusPublished - 2016 Mar 31
Event16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016 - Austin, United States
Duration: 2016 Jan 242016 Jan 27

Other

Other16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016
CountryUnited States
CityAustin
Period16/1/2416/1/27

Keywords

  • oscillators
  • switches
  • Transmitters

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Computer Networks and Communications

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  • Cite this

    Kim, N., Son, H., Kim, D. H., & Rieh, J-S. (2016). A 130-GHz OOK transmitter in 65-nm CMOS technology. In SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 113-115). [7445484] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIRF.2016.7445484