A 135 GHz G m -boosted down-conversion active mixer adopting dual baluns has been developed in this work. Fabricated with a 0.18-μ m SiGe BiCMOS technology, the mixer exhibits a differential-mode conversion gain of 11.5 dB at RF frequency of 134.7 GHz for a fixed LO frequency and power of 134 GHz and 10 dBm, respectively. The mixer also shows a P - dB of -20 dBm and LO-RF isolation of 31 dB. The entire circuit draws 1.3 mA from a 3 V supply. The fabricated mixer occupies 0.23 × 0.54 mm 2 of chip area excluding pad region.
- millimeter-wave circuits
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering