A 135 GHz differential active star mixer in SiGe BiCMOS technology

Dong Hyun Kim; Jae Sung Rieh

doi:10.1109/LMWC.2012.2205909

A 135 GHz differential active star mixer in SiGe BiCMOS technology

Dong Hyun Kim, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A 135 GHz G _m -boosted down-conversion active mixer adopting dual baluns has been developed in this work. Fabricated with a 0.18-μ m SiGe BiCMOS technology, the mixer exhibits a differential-mode conversion gain of 11.5 dB at RF frequency of 134.7 GHz for a fixed LO frequency and power of 134 GHz and 10 dBm, respectively. The mixer also shows a P _{- dB} of -20 dBm and LO-RF isolation of 31 dB. The entire circuit draws 1.3 mA from a 3 V supply. The fabricated mixer occupies 0.23 × 0.54 mm ² of chip area excluding pad region.

Original language	English
Article number	6236232
Pages (from-to)	409-411
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	22
Issue number	8
DOIs	https://doi.org/10.1109/LMWC.2012.2205909
Publication status	Published - 2012

Keywords

Gain
millimeter-wave circuits
mixers

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2012.2205909

Cite this

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title = "A 135 GHz differential active star mixer in SiGe BiCMOS technology",

abstract = "A 135 GHz G m -boosted down-conversion active mixer adopting dual baluns has been developed in this work. Fabricated with a 0.18-μ m SiGe BiCMOS technology, the mixer exhibits a differential-mode conversion gain of 11.5 dB at RF frequency of 134.7 GHz for a fixed LO frequency and power of 134 GHz and 10 dBm, respectively. The mixer also shows a P - dB of -20 dBm and LO-RF isolation of 31 dB. The entire circuit draws 1.3 mA from a 3 V supply. The fabricated mixer occupies 0.23 × 0.54 mm 2 of chip area excluding pad region.",

keywords = "Gain, millimeter-wave circuits, mixers",

author = "Kim, {Dong Hyun} and Rieh, {Jae Sung}",

note = "Funding Information: Manuscript received February 02, 2012; revised May 12, 2012 and June 14, 2012; accepted June 19, 2012. Date of publication July 10, 2012; date of current version August 03, 2012. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2012R1A2A1A01005584).",

year = "2012",

doi = "10.1109/LMWC.2012.2205909",

language = "English",

volume = "22",

pages = "409--411",

journal = "IEEE Microwave and Wireless Components Letters",

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T1 - A 135 GHz differential active star mixer in SiGe BiCMOS technology

AU - Kim, Dong Hyun

AU - Rieh, Jae Sung

N1 - Funding Information: Manuscript received February 02, 2012; revised May 12, 2012 and June 14, 2012; accepted June 19, 2012. Date of publication July 10, 2012; date of current version August 03, 2012. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2012R1A2A1A01005584).

PY - 2012

Y1 - 2012

N2 - A 135 GHz G m -boosted down-conversion active mixer adopting dual baluns has been developed in this work. Fabricated with a 0.18-μ m SiGe BiCMOS technology, the mixer exhibits a differential-mode conversion gain of 11.5 dB at RF frequency of 134.7 GHz for a fixed LO frequency and power of 134 GHz and 10 dBm, respectively. The mixer also shows a P - dB of -20 dBm and LO-RF isolation of 31 dB. The entire circuit draws 1.3 mA from a 3 V supply. The fabricated mixer occupies 0.23 × 0.54 mm 2 of chip area excluding pad region.

AB - A 135 GHz G m -boosted down-conversion active mixer adopting dual baluns has been developed in this work. Fabricated with a 0.18-μ m SiGe BiCMOS technology, the mixer exhibits a differential-mode conversion gain of 11.5 dB at RF frequency of 134.7 GHz for a fixed LO frequency and power of 134 GHz and 10 dBm, respectively. The mixer also shows a P - dB of -20 dBm and LO-RF isolation of 31 dB. The entire circuit draws 1.3 mA from a 3 V supply. The fabricated mixer occupies 0.23 × 0.54 mm 2 of chip area excluding pad region.

KW - Gain

KW - millimeter-wave circuits

KW - mixers

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U2 - 10.1109/LMWC.2012.2205909

DO - 10.1109/LMWC.2012.2205909

M3 - Article

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VL - 22

SP - 409

EP - 411

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 8

M1 - 6236232

ER -

A 135 GHz differential active star mixer in SiGe BiCMOS technology

Abstract

Keywords

ASJC Scopus subject areas

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