A 135 GHz differential active star mixer in SiGe BiCMOS technology

Dong Hyun Kim, Jae-Sung Rieh

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A 135 GHz G m -boosted down-conversion active mixer adopting dual baluns has been developed in this work. Fabricated with a 0.18-μ m SiGe BiCMOS technology, the mixer exhibits a differential-mode conversion gain of 11.5 dB at RF frequency of 134.7 GHz for a fixed LO frequency and power of 134 GHz and 10 dBm, respectively. The mixer also shows a P - dB of -20 dBm and LO-RF isolation of 31 dB. The entire circuit draws 1.3 mA from a 3 V supply. The fabricated mixer occupies 0.23 × 0.54 mm 2 of chip area excluding pad region.

Original languageEnglish
Article number6236232
Pages (from-to)409-411
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume22
Issue number8
DOIs
Publication statusPublished - 2012 Jul 17

Fingerprint

BiCMOS technology
Stars
stars
Networks (circuits)
isolation
chips

Keywords

  • Gain
  • millimeter-wave circuits
  • mixers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

A 135 GHz differential active star mixer in SiGe BiCMOS technology. / Kim, Dong Hyun; Rieh, Jae-Sung.

In: IEEE Microwave and Wireless Components Letters, Vol. 22, No. 8, 6236232, 17.07.2012, p. 409-411.

Research output: Contribution to journalArticle

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