A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology

Jongwon Yun; Hyunchul Kim; Hyogi Seo; Jae Sung Rieh

doi:10.1109/SiRF.2012.6160135

A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology

Jongwon Yun, Hyunchul Kim, Hyogi Seo, Jae Sung Rieh

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

In this work, a single-ended divide-by-2 injection locked frequency divider with inductive feedback is presented. The frequency divider, fabricated in a commercial 0.18 μm SiGe HBT technology, showed a measured locking range of 126.9 - 141.5 GHz (14.7 GHz) and an operating range of 126.9 - 150.0 GHz (23.1 GHz) with bias adjustment. The DC power consumption of the ILFD core was 6.9 mW and that of the output buffer was 13.5 mW.

Original language	English
Title of host publication	2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers
Pages	61-64
Number of pages	4
DOIs	https://doi.org/10.1109/SiRF.2012.6160135
Publication status	Published - 2012
Event	2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Santa Clara, CA, United States Duration: 2012 Jan 16 → 2012 Jan 18

Publication series

Name	2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers

Other

Other	2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012
Country/Territory	United States
City	Santa Clara, CA
Period	12/1/16 → 12/1/18

Keywords

feedback
heterojunction bipolar transistors
silicon germanium

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/SiRF.2012.6160135

Cite this

Yun, J., Kim, H., Seo, H., & Rieh, J. S. (2012). A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology. In 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers (pp. 61-64). [6160135] (2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers). https://doi.org/10.1109/SiRF.2012.6160135

A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology. / Yun, Jongwon; Kim, Hyunchul; Seo, Hyogi et al.

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers. 2012. p. 61-64 6160135 (2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yun, J, Kim, H, Seo, H & Rieh, JS 2012, A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology. in 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers., 6160135, 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers, pp. 61-64, 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012, Santa Clara, CA, United States, 12/1/16. https://doi.org/10.1109/SiRF.2012.6160135

Yun J, Kim H, Seo H, Rieh JS. A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology. In 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers. 2012. p. 61-64. 6160135. (2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers). doi: 10.1109/SiRF.2012.6160135

Yun, Jongwon ; Kim, Hyunchul ; Seo, Hyogi et al. / A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology. 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers. 2012. pp. 61-64 (2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers).

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title = "A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology",

abstract = "In this work, a single-ended divide-by-2 injection locked frequency divider with inductive feedback is presented. The frequency divider, fabricated in a commercial 0.18 μm SiGe HBT technology, showed a measured locking range of 126.9 - 141.5 GHz (14.7 GHz) and an operating range of 126.9 - 150.0 GHz (23.1 GHz) with bias adjustment. The DC power consumption of the ILFD core was 6.9 mW and that of the output buffer was 13.5 mW.",

keywords = "feedback, heterojunction bipolar transistors, silicon germanium",

author = "Jongwon Yun and Hyunchul Kim and Hyogi Seo and Rieh, {Jae Sung}",

year = "2012",

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AB - In this work, a single-ended divide-by-2 injection locked frequency divider with inductive feedback is presented. The frequency divider, fabricated in a commercial 0.18 μm SiGe HBT technology, showed a measured locking range of 126.9 - 141.5 GHz (14.7 GHz) and an operating range of 126.9 - 150.0 GHz (23.1 GHz) with bias adjustment. The DC power consumption of the ILFD core was 6.9 mW and that of the output buffer was 13.5 mW.

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KW - silicon germanium

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A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology

Abstract

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Keywords

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