A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology

Jongwon Yun, Hyunchul Kim, Hyogi Seo, Jae-Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

In this work, a single-ended divide-by-2 injection locked frequency divider with inductive feedback is presented. The frequency divider, fabricated in a commercial 0.18 μm SiGe HBT technology, showed a measured locking range of 126.9 - 141.5 GHz (14.7 GHz) and an operating range of 126.9 - 150.0 GHz (23.1 GHz) with bias adjustment. The DC power consumption of the ILFD core was 6.9 mW and that of the output buffer was 13.5 mW.

Original languageEnglish
Title of host publication2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers
Pages61-64
Number of pages4
DOIs
Publication statusPublished - 2012 Mar 27
Event2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Santa Clara, CA, United States
Duration: 2012 Jan 162012 Jan 18

Other

Other2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012
CountryUnited States
CitySanta Clara, CA
Period12/1/1612/1/18

Fingerprint

Heterojunction bipolar transistors
Electric power utilization
Feedback

Keywords

  • feedback
  • heterojunction bipolar transistors
  • silicon germanium

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Yun, J., Kim, H., Seo, H., & Rieh, J-S. (2012). A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology. In 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers (pp. 61-64). [6160135] https://doi.org/10.1109/SiRF.2012.6160135

A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology. / Yun, Jongwon; Kim, Hyunchul; Seo, Hyogi; Rieh, Jae-Sung.

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers. 2012. p. 61-64 6160135.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yun, J, Kim, H, Seo, H & Rieh, J-S 2012, A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology. in 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers., 6160135, pp. 61-64, 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012, Santa Clara, CA, United States, 12/1/16. https://doi.org/10.1109/SiRF.2012.6160135
Yun J, Kim H, Seo H, Rieh J-S. A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology. In 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers. 2012. p. 61-64. 6160135 https://doi.org/10.1109/SiRF.2012.6160135
Yun, Jongwon ; Kim, Hyunchul ; Seo, Hyogi ; Rieh, Jae-Sung. / A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology. 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers. 2012. pp. 61-64
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