DRAM's process technology has been scaled down rapidly and the size of the wafer has reached 300mm. Despite being fabricated on the same wafer, two chips may have very different characteristics if the one is from the center and the other is from the edge of wafer. Therefore, the process skew reduction is becoming more important as the process is scaled down under 100nm. The dynamic voltage scaling scheme (DVS) has already won huge popularity in mobile applications with limited battery life. Various dynamic voltage scaling techniques for μ-processors have also been developed during the last decade . However, selection of the power supply voltage for DRAM is dictated by the application or the worst process skew that guarantees the performance of DRAM. This paper proposes a self-dynamic voltage scaling (SDVS) technique for DRAM to overcome the process variation and reduce the power consumption according to the operating frequency.